Des échantillons de mica irradiés par des ions lourds de grande énergie sont observés par des mesures de diffusion de rayons X aux petits angles. On observe la présence de défauts ponctuels et de défauts étendus, dont le rayon est de l'ordre de 20 Å.Muscovite mica samples irradiated with high energetic heavy ions are studied by small angle scattering of X rays. Point defects are created, and also larger defects of about 20 Å radius
Mica is very sensitive to heavy-ion irradiation and offers an ideal surface for scanning force micro...
The influence of the charge state q on surface modifications induced by the impact of individual fas...
Mica is very sensitive to heavy-ion irradiation and offers also an ideal surface for scanning force ...
The structure of the defects which comprise the latent track of heavy ions in muscovite mica is stud...
Radiation induced defects on mica caused by the impact of slow very highly charged ions (SVHCI) have...
X-ray small angle scattering experiments are used to study the latent tracks produced by Fe and Ar i...
The production of extended defects by a high density of electron excitation has been described in ma...
The radiation defect formation at the action of ions with energy of 0,5-1 MeV/nucleon on semiconduct...
L'étude des défauts d'irradiation aux ions (créés essentiellement dans des cibles d'or) a été menée ...
En conditions de stockage définitif, la désintégration a des radionucléides (produits en réacteur) i...
International audienceImplantations with low-energy ions (Xe, La) on UO2 single crystals at 773 K we...
The aim is to study the radiation defect formation, changes of the macroscopic properties and micros...
Previous studies [1], [2] have been made of the diffusion enhancement in high temperature proton irr...
Abstract: A distribution of crystallographic defects and deformation in silicon crystals subjected t...
The point defect structure of individual depleted zones (DZs) created by a variety of different proj...
Mica is very sensitive to heavy-ion irradiation and offers an ideal surface for scanning force micro...
The influence of the charge state q on surface modifications induced by the impact of individual fas...
Mica is very sensitive to heavy-ion irradiation and offers also an ideal surface for scanning force ...
The structure of the defects which comprise the latent track of heavy ions in muscovite mica is stud...
Radiation induced defects on mica caused by the impact of slow very highly charged ions (SVHCI) have...
X-ray small angle scattering experiments are used to study the latent tracks produced by Fe and Ar i...
The production of extended defects by a high density of electron excitation has been described in ma...
The radiation defect formation at the action of ions with energy of 0,5-1 MeV/nucleon on semiconduct...
L'étude des défauts d'irradiation aux ions (créés essentiellement dans des cibles d'or) a été menée ...
En conditions de stockage définitif, la désintégration a des radionucléides (produits en réacteur) i...
International audienceImplantations with low-energy ions (Xe, La) on UO2 single crystals at 773 K we...
The aim is to study the radiation defect formation, changes of the macroscopic properties and micros...
Previous studies [1], [2] have been made of the diffusion enhancement in high temperature proton irr...
Abstract: A distribution of crystallographic defects and deformation in silicon crystals subjected t...
The point defect structure of individual depleted zones (DZs) created by a variety of different proj...
Mica is very sensitive to heavy-ion irradiation and offers an ideal surface for scanning force micro...
The influence of the charge state q on surface modifications induced by the impact of individual fas...
Mica is very sensitive to heavy-ion irradiation and offers also an ideal surface for scanning force ...
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