PARTICULAR FEATURES OF THE DEFECT FORMATION AT THE IMPLANTATION OF IONS OF THE HIGHTENED ENERGY INTO SOLID BODIES

The radiation defect formation at the action of ions with energy of 0,5-1 MeV/nucleon on semiconductors and metals is investigated in the paper aiming at the establishment of particular features for the dissipation of electron excitations of the big density (keV/nm) and the kinetics of the defect accumulation at the implantation of ions of the hightened energy into semiconductors and metals. As a result typical (non-monotonous) dependences, connected with the degree of the crystal defectness, on the radiation dose have been detected. Correlations between the dose dependence of the Rezerford scattering output in the minimum of an inverse shadow and microhardness have been established. The mechanism for the relaxation of electron excitations has been suggested. The of principle possibility for the creation of deepened isolating layers by means of the implantation of ions of the hightened energy has been shown. The possibility for the estimation of the defectness degree on results of the tst on the microhardness of metals, implanted by ions of the hightened energy, has been substantiated. The paper results may find their field of application in the radiation solid-state physics, microelectronicsAvailable from VNTIC / VNTIC - Scientific & Technical Information Centre of RussiaSIGLERURussian Federatio