ELECTRON REACTIONS OF DEFECTS AT ATOMIC DIFFUSION, DEFECT FORMATION AND MECHANICAL RELAXATION IN SEMICONDUCTORS

Semiconductors with defects, non-ordered solid bodies are investigated in the paper aiming at the construction of the general kinetic theory of interconnected electron and atomic reactions of defects and relaxation effects in solid bodies. As a result the general theory of the influence of equilibrium and non-equilibrium charge carriers on speeds of the reaction of defects has been constructed for the first time. Equations, describing the interconnection of the defect mobility and electron transfers between states, localized on them, have been suggested and investigated. It has been shown, that the transfer from normal diffusion to abnormal takes place in a non-ordered solid body at the temperature decrease. The general form of the abnormal diffusion law has been obtained. The new effective method for the solution of problems of diffusion and propagation of waves in heterogeneous media has been developed. The theoretical interpretation of the effect of electromagnetic relaxation, connected with deep levels (ERDL), in semiconducting compounds, interpretation making it possible to use ERDL as the control method for an electron structure of high-ohm semiconductros, has been givenAvailable from VNTIC / VNTIC - Scientific & Technical Information Centre of RussiaSIGLERURussian Federatio