Abstract — Several physical effects that limit the reliability and performance of Multilevel Flash memories induce errors that have low magnitude and are dominantly asymmetric. This paper studies block codes for asymmetric limited-magnitude errors over q-ary channels. We propose code constructions for such channels when the number of errors is bounded by t. The construction uses known codes for symmetric errors over small alphabets to protect large-alphabet symbols from asymmetric limited-magnitude errors. The encoding and decoding of these codes are performed over the small alphabet whose size depends only on the maximum error magnitude and is independent of the alphabet size of the outer code. An extension of the construction is proposed ...
Abstract—Codes that correct limited-magnitude errors for multi-level cell nonvolatile memories, such...
Flash memory is a promising new storage technology. Supported by empirical data collected from a Fla...
Flash memory is a promising new storage technology. Supported by empirical data collected from a Fla...
Abstract—Several physical effects that limit the reliability and performance of multilevel flash mem...
Several physical effects that limit the reliability and performance of Multilevel Flash memories ind...
Several physical effects that limit the reliability and performance of Multilevel Flash memories ind...
Several physical effects that limit the reliability and performance of Multilevel Flash memories ind...
Several physical effects that limit the reliability and performance of multilevel flash memories ind...
The writing operation of multi-level flash memories can suffer from voltage overshoots, which can be...
The writing operation of multi-level flash memories can suffer from voltage overshoots, which can be...
The writing operation of multi-level flash memories can suffer from voltage overshoots, which can be...
Abstract—We study error-correcting codes for permutations under the infinity norm, motivated by a no...
Graduation date: 2010A relatively new model of error control is the limited magnitude error over hig...
Memory devices based on floating-gate transistor have recently become dominant technology for non-vo...
The binary asymmetric channel (BAC) is a model for the error characterization of multi-level cell (M...
Abstract—Codes that correct limited-magnitude errors for multi-level cell nonvolatile memories, such...
Flash memory is a promising new storage technology. Supported by empirical data collected from a Fla...
Flash memory is a promising new storage technology. Supported by empirical data collected from a Fla...
Abstract—Several physical effects that limit the reliability and performance of multilevel flash mem...
Several physical effects that limit the reliability and performance of Multilevel Flash memories ind...
Several physical effects that limit the reliability and performance of Multilevel Flash memories ind...
Several physical effects that limit the reliability and performance of Multilevel Flash memories ind...
Several physical effects that limit the reliability and performance of multilevel flash memories ind...
The writing operation of multi-level flash memories can suffer from voltage overshoots, which can be...
The writing operation of multi-level flash memories can suffer from voltage overshoots, which can be...
The writing operation of multi-level flash memories can suffer from voltage overshoots, which can be...
Abstract—We study error-correcting codes for permutations under the infinity norm, motivated by a no...
Graduation date: 2010A relatively new model of error control is the limited magnitude error over hig...
Memory devices based on floating-gate transistor have recently become dominant technology for non-vo...
The binary asymmetric channel (BAC) is a model for the error characterization of multi-level cell (M...
Abstract—Codes that correct limited-magnitude errors for multi-level cell nonvolatile memories, such...
Flash memory is a promising new storage technology. Supported by empirical data collected from a Fla...
Flash memory is a promising new storage technology. Supported by empirical data collected from a Fla...