Flash memory is a promising new storage technology. Supported by empirical data collected from a Flash memory device, we propose a class of codes that exploits the asymmetric nature of the error patterns in a Flash device using tensor product operations. We call these codes graded bit-error-correcting codes. As demonstrated on the data collected from a Flash chip, these codes significantly delay the onset of errors and therefore have the potential to prolong the lifetime of the memory device
Abstract—Several physical effects that limit the reliability and performance of multilevel flash mem...
The growing error rates of triple-level cell (TLC) and quadruple-level cell (QLC) NAND flash memorie...
We investigate a novel storage technology, Rank Modulation, for flash memories. In this scheme, a se...
Flash memory is a promising new storage technology. Supported by empirical data collected from a Fla...
Flash memories are, by far, the most important type of non -volatile memory in use today. They are e...
Flash memories are, by far, the most important type of non -volatile memory in use today. They are e...
This paper presents a method to reduce area overhead and timing impact due to the implementation of ...
Error-correcting codes are used to achieve reliable and efficient transmission when storing or sendi...
Error-correcting codes are used to achieve reliable and efficient transmission when storing or sendi...
Error-correcting codes are used to achieve reliable and efficient transmission when storing or sendi...
Abstract — Several physical effects that limit the reliability and performance of Multilevel Flash m...
Memory devices based on floating-gate transistor have recently become dominant technology for non-vo...
Several physical effects that limit the reliability and performance of Multilevel Flash memories ind...
Several physical effects that limit the reliability and performance of Multilevel Flash memories ind...
Several physical effects that limit the reliability and performance of Multilevel Flash memories ind...
Abstract—Several physical effects that limit the reliability and performance of multilevel flash mem...
The growing error rates of triple-level cell (TLC) and quadruple-level cell (QLC) NAND flash memorie...
We investigate a novel storage technology, Rank Modulation, for flash memories. In this scheme, a se...
Flash memory is a promising new storage technology. Supported by empirical data collected from a Fla...
Flash memories are, by far, the most important type of non -volatile memory in use today. They are e...
Flash memories are, by far, the most important type of non -volatile memory in use today. They are e...
This paper presents a method to reduce area overhead and timing impact due to the implementation of ...
Error-correcting codes are used to achieve reliable and efficient transmission when storing or sendi...
Error-correcting codes are used to achieve reliable and efficient transmission when storing or sendi...
Error-correcting codes are used to achieve reliable and efficient transmission when storing or sendi...
Abstract — Several physical effects that limit the reliability and performance of Multilevel Flash m...
Memory devices based on floating-gate transistor have recently become dominant technology for non-vo...
Several physical effects that limit the reliability and performance of Multilevel Flash memories ind...
Several physical effects that limit the reliability and performance of Multilevel Flash memories ind...
Several physical effects that limit the reliability and performance of Multilevel Flash memories ind...
Abstract—Several physical effects that limit the reliability and performance of multilevel flash mem...
The growing error rates of triple-level cell (TLC) and quadruple-level cell (QLC) NAND flash memorie...
We investigate a novel storage technology, Rank Modulation, for flash memories. In this scheme, a se...