The writing operation of multi-level flash memories can suffer from voltage overshoots, which can be generally modeled as asymmetric errors of limited magnitude. Using suitable error correcting codes, these kinds of errors can be corrected. In particular, -ary non-linear codes of length 2 are equivalent to packings of the plane modulo with quasi-crosses. The design procedures for a number of such packings are presented
We investigate error-correcting codes for a the rank-modulation scheme with an application to flash...
We investigate error-correcting codes for a the rank-modulation scheme with an application to flash...
We investigate error-correcting codes for a novel storage technology for flash memories, the rank-mo...
The writing operation of multi-level flash memories can suffer from voltage overshoots, which can be...
The writing operation of multi-level flash memories can suffer from voltage overshoots, which can be...
Abstract — Several physical effects that limit the reliability and performance of Multilevel Flash m...
Abstract—Several physical effects that limit the reliability and performance of multilevel flash mem...
Several physical effects that limit the reliability and performance of Multilevel Flash memories ind...
Several physical effects that limit the reliability and performance of Multilevel Flash memories ind...
Several physical effects that limit the reliability and performance of Multilevel Flash memories ind...
Several physical effects that limit the reliability and performance of multilevel flash memories ind...
Memory devices based on floating-gate transistor have recently become dominant technology for non-vo...
Flash memories are, by far, the most important type of non -volatile memory in use today. They are e...
Flash memories are, by far, the most important type of non -volatile memory in use today. They are e...
Abstract—We investigate error-correcting codes for a the rank-modulation scheme with an application ...
We investigate error-correcting codes for a the rank-modulation scheme with an application to flash...
We investigate error-correcting codes for a the rank-modulation scheme with an application to flash...
We investigate error-correcting codes for a novel storage technology for flash memories, the rank-mo...
The writing operation of multi-level flash memories can suffer from voltage overshoots, which can be...
The writing operation of multi-level flash memories can suffer from voltage overshoots, which can be...
Abstract — Several physical effects that limit the reliability and performance of Multilevel Flash m...
Abstract—Several physical effects that limit the reliability and performance of multilevel flash mem...
Several physical effects that limit the reliability and performance of Multilevel Flash memories ind...
Several physical effects that limit the reliability and performance of Multilevel Flash memories ind...
Several physical effects that limit the reliability and performance of Multilevel Flash memories ind...
Several physical effects that limit the reliability and performance of multilevel flash memories ind...
Memory devices based on floating-gate transistor have recently become dominant technology for non-vo...
Flash memories are, by far, the most important type of non -volatile memory in use today. They are e...
Flash memories are, by far, the most important type of non -volatile memory in use today. They are e...
Abstract—We investigate error-correcting codes for a the rank-modulation scheme with an application ...
We investigate error-correcting codes for a the rank-modulation scheme with an application to flash...
We investigate error-correcting codes for a the rank-modulation scheme with an application to flash...
We investigate error-correcting codes for a novel storage technology for flash memories, the rank-mo...