Abstract—Several physical effects that limit the reliability and performance of multilevel flash memories induce errors that have low magnitudes and are dominantly asymmetric. This paper studies block codes for asymmetric limited-magnitude errors over -ary channels. We propose code constructions and bounds for such channels when the number of errors is bounded by and the error magnitudes are bounded by . The constructions utilize known codes for symmetric errors, over small alphabets, to pro-tect large-alphabet symbols from asymmetric limited-magnitude errors. The encoding and decoding of these codes are performed over the small alphabet whose size depends only on the maximum error magnitude and is independent of the alphabet size of the o...
This paper is concerned with error correcting codes for asymmetric memories or channels. An asymmetr...
Abstract—We investigate error-correcting codes for a the rank-modulation scheme with an application ...
International audienceTernary channels can be used to model the behavior of some memory devices, whe...
Abstract — Several physical effects that limit the reliability and performance of Multilevel Flash m...
Several physical effects that limit the reliability and performance of multilevel flash memories ind...
Several physical effects that limit the reliability and performance of Multilevel Flash memories ind...
Several physical effects that limit the reliability and performance of Multilevel Flash memories ind...
Several physical effects that limit the reliability and performance of Multilevel Flash memories ind...
Abstract—We study error-correcting codes for permutations under the infinity norm, motivated by a no...
The writing operation of multi-level flash memories can suffer from voltage overshoots, which can be...
The writing operation of multi-level flash memories can suffer from voltage overshoots, which can be...
The writing operation of multi-level flash memories can suffer from voltage overshoots, which can be...
Graduation date: 2010A relatively new model of error control is the limited magnitude error over hig...
Memory devices based on floating-gate transistor have recently become dominant technology for non-vo...
114 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1981.We study binary error-correct...
This paper is concerned with error correcting codes for asymmetric memories or channels. An asymmetr...
Abstract—We investigate error-correcting codes for a the rank-modulation scheme with an application ...
International audienceTernary channels can be used to model the behavior of some memory devices, whe...
Abstract — Several physical effects that limit the reliability and performance of Multilevel Flash m...
Several physical effects that limit the reliability and performance of multilevel flash memories ind...
Several physical effects that limit the reliability and performance of Multilevel Flash memories ind...
Several physical effects that limit the reliability and performance of Multilevel Flash memories ind...
Several physical effects that limit the reliability and performance of Multilevel Flash memories ind...
Abstract—We study error-correcting codes for permutations under the infinity norm, motivated by a no...
The writing operation of multi-level flash memories can suffer from voltage overshoots, which can be...
The writing operation of multi-level flash memories can suffer from voltage overshoots, which can be...
The writing operation of multi-level flash memories can suffer from voltage overshoots, which can be...
Graduation date: 2010A relatively new model of error control is the limited magnitude error over hig...
Memory devices based on floating-gate transistor have recently become dominant technology for non-vo...
114 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1981.We study binary error-correct...
This paper is concerned with error correcting codes for asymmetric memories or channels. An asymmetr...
Abstract—We investigate error-correcting codes for a the rank-modulation scheme with an application ...
International audienceTernary channels can be used to model the behavior of some memory devices, whe...