High Performance 400 degrees C p(+)/n Ge Junctions Using Cryogenic Boron Implantation

We report high performance Ge p(+)/n junctions using a single, cryogenic (-100 degrees C) boron ion implantation process. High activation >4 x 10(20) cm(-3) results in specific contact resistivity of 1.7 x 10(-8) Omega-cm(2) on p(+)-Ge, which is close to ITRS 15 nm specification (1 x 10(-8) Omega-cm(2)) and nearly 4.5x lower than the state of the art (8 x 10(-8) Omega-cm(2)). Cryogenic implantation is shown to enable solid-phase epitaxial regrowth and lower junction depth through amorphization of the surface Ge layer. These improvements in Ge p(+)/n junctions can pave the way for future high mobility Ge p-MOSFETs