In this paper, solid phase epitaxy (SPE) process is proposed to improve phosphorous activation and hence reduce the contact resistivity of n+/p junction for Ge n-MOS technology. Over 1×1020cm-3electrical concentration and about 1.75×10-6ohm·cm2contact resistivity have been achieved at P+implantation of 10keV and 5×1014cm-2and annealing condition of 600oC, 10seconds. The fabricated N+/P diode shows 2 times higher forward current and well controlled leakage. ? 2015 JSAP.E
The profiles of the impurity concentrations and carrier concentrations of n-type dopants (As and P) ...
Ultrashallow p(+)n junctions have been formed in silicon by low energy (5.5 keV) Ga+ implantation in...
Abstract — In this letter, we present a high performance Ge n-channel metal-oxide-semiconductor fiel...
In this paper, solid phase epitaxy (SPE) process is proposed to improve phosphorous activation and h...
Abstract—We demonstrate an abrupt and box-shaped n+/p junction in Ge with a high level of activation...
In this paper, we present a detailed study of temperature-based ion implantation of phosphorus dopan...
In this work, the effect of Ge point defect healing process between 550 °C and 650 °C is investigate...
Currently, the International Technology Roadmap for Semiconductors (ITRS) is targeting the 22nm tech...
We report high performance Ge p(+)/n junctions using a single, cryogenic (-100 degrees C) boron ion ...
In this work we demonstrate the fabrication and characterization of high performance junction diodes...
International audienceIn this paper, state-of-the-art laser thermal anneal-ing is used to fabricate ...
One option in enhancing metal-oxide-semiconductor transistor devices is by replacing silicon with hi...
This paper benchmarks various epitaxial growth schemes based on n-type group-IV materials as viable ...
We investigate phosphorus in-situ doping characteristics in germanium (Ge) during epitaxial growth b...
Germanium has interesting optical properties and high carrier mobilities, which can add functionalit...
The profiles of the impurity concentrations and carrier concentrations of n-type dopants (As and P) ...
Ultrashallow p(+)n junctions have been formed in silicon by low energy (5.5 keV) Ga+ implantation in...
Abstract — In this letter, we present a high performance Ge n-channel metal-oxide-semiconductor fiel...
In this paper, solid phase epitaxy (SPE) process is proposed to improve phosphorous activation and h...
Abstract—We demonstrate an abrupt and box-shaped n+/p junction in Ge with a high level of activation...
In this paper, we present a detailed study of temperature-based ion implantation of phosphorus dopan...
In this work, the effect of Ge point defect healing process between 550 °C and 650 °C is investigate...
Currently, the International Technology Roadmap for Semiconductors (ITRS) is targeting the 22nm tech...
We report high performance Ge p(+)/n junctions using a single, cryogenic (-100 degrees C) boron ion ...
In this work we demonstrate the fabrication and characterization of high performance junction diodes...
International audienceIn this paper, state-of-the-art laser thermal anneal-ing is used to fabricate ...
One option in enhancing metal-oxide-semiconductor transistor devices is by replacing silicon with hi...
This paper benchmarks various epitaxial growth schemes based on n-type group-IV materials as viable ...
We investigate phosphorus in-situ doping characteristics in germanium (Ge) during epitaxial growth b...
Germanium has interesting optical properties and high carrier mobilities, which can add functionalit...
The profiles of the impurity concentrations and carrier concentrations of n-type dopants (As and P) ...
Ultrashallow p(+)n junctions have been formed in silicon by low energy (5.5 keV) Ga+ implantation in...
Abstract — In this letter, we present a high performance Ge n-channel metal-oxide-semiconductor fiel...
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