Planar waveguides in Ce : SBN and Cu : KNSBN crystals by 6.0 MeV B3+ ion implantation

Planar optical waveguides were formed in Ce:SBN and Cu:KNSBN crystals, respectively, by means of 6.0 MeV B3+ ion implantation at a dose of 2 x 10(14) ions/cm(2) at room temperatures. The prism coupling method was performed to characterize the dark-mode property of the waveguides. The reconstructed refractive index profiles in the waveguides were found to be typical barrier-type distributions. Transport and range of ions in matter (TRIM 98) code was used to simulate the process of the implantations. The shapes of nuclear energy loss distribution of the B3+ implantation were similar to those of the waveguide refractive index profiles, which means an inherent relationship between the waveguide formation and the energetic energy deposition. (C) 2002 Elsevier Science B.V. All rights reserved.Chemistry, PhysicalMaterials Science, Coatings & FilmsPhysics, AppliedPhysics, Condensed MatterSCI(E)EI2ARTICLE1-286-9120