Refractive index profiles of planar optical waveguides in beta-BBO produced by silicon ion implantation

The planar waveguides have been fabricated in z-cut beta barium metaborate crystals by 2.8 MeV Si+ ion implantation with doses of 1 X 10(15) and 3 x 10(15) ions/cm(2) at room temperature. The waveguides were characterized by the prism-coupling method. The refractive index profiles were reconstructed using reflectivity calculation method. It is found that relatively large positive changes of extraordinary refractive indices happen in the guiding regions, and the negative changes of ordinary refractive indices happen at the end of the track. TRIM'98 (transport of ions in matter) code was used to simulate the damage profile in beta-BBO by 2.8MeV Si+ ion implantation. (C) 2004 Elsevier B.V. All rights reserved.Materials Science, MultidisciplinaryOpticsSCI(E)EI0ARTICLE3459-4632