Monte Carlo channeling simulations for 3 MeV protons which are transmitted close to the [011] axis of a silicon layer up to 200 nm thick are presented. The emergent angular intensity at different incident tilt angles and layer thicknesses is related to the spatial distribution of the channeled protons across the [011] unit cell. The transition between a channeling regime where the angular intensity distribution is dominated by 'rainbow' channeling, and a regime which is characterised by a 'doughnut' distribution is studied for different tilt angles. (C) 1999 Elsevier Science B.V. All rights reserved
We have studied theoretically angular distributions of relativistic protons axially channeled throug...
Abstract. The channelling of 3 MeV protons in the h110i direction of silicon has been simulated usin...
The angular distributions of protons channeled in a tilted (111) Si very thin crystal together with ...
Monte Carlo channeling simulations for 3 MeV protons which are transmitted close to the [011] axis o...
Monte Carlo channeling simulations for 3 MeV protons which are transmitted close to the [011] axis o...
Monte Carlo channeling simulations for 3 MeV protons which are transmitted close to the [011] axis o...
This paper characterises the angular intensity distribution of MeV protons transmitted through strai...
This paper characterises the angular intensity distribution of MeV protons transmitted through strai...
This paper characterises the angular intensity distribution of MeV protons transmitted through strai...
The azimuthal distributions of protons transmitted through thin silicon single crystals near the ⟨11...
This paper describes the observation of {110} planar oscillations of 3 MeV protons transmitted throu...
This paper describes the observation of {110} planar oscillations of 3 MeV protons transmitted throu...
This paper describes the observation of {110} planar oscillations of 3 MeV protons transmitted throu...
This paper describes the observation of {110} planar oscillations of 3 MeV protons transmitted throu...
We have studied theoretically angular distributions of relativistic protons axially channeled throug...
We have studied theoretically angular distributions of relativistic protons axially channeled throug...
Abstract. The channelling of 3 MeV protons in the h110i direction of silicon has been simulated usin...
The angular distributions of protons channeled in a tilted (111) Si very thin crystal together with ...
Monte Carlo channeling simulations for 3 MeV protons which are transmitted close to the [011] axis o...
Monte Carlo channeling simulations for 3 MeV protons which are transmitted close to the [011] axis o...
Monte Carlo channeling simulations for 3 MeV protons which are transmitted close to the [011] axis o...
This paper characterises the angular intensity distribution of MeV protons transmitted through strai...
This paper characterises the angular intensity distribution of MeV protons transmitted through strai...
This paper characterises the angular intensity distribution of MeV protons transmitted through strai...
The azimuthal distributions of protons transmitted through thin silicon single crystals near the ⟨11...
This paper describes the observation of {110} planar oscillations of 3 MeV protons transmitted throu...
This paper describes the observation of {110} planar oscillations of 3 MeV protons transmitted throu...
This paper describes the observation of {110} planar oscillations of 3 MeV protons transmitted throu...
This paper describes the observation of {110} planar oscillations of 3 MeV protons transmitted throu...
We have studied theoretically angular distributions of relativistic protons axially channeled throug...
We have studied theoretically angular distributions of relativistic protons axially channeled throug...
Abstract. The channelling of 3 MeV protons in the h110i direction of silicon has been simulated usin...
The angular distributions of protons channeled in a tilted (111) Si very thin crystal together with ...