physics pp. 845–856 Computer simulation of proton channelling in silicon

Abstract. The channelling of 3 MeV protons in the h110i direction of silicon has been simulated using Vineyard model taking into account thermally vibrating nuclei and energy loss due to ion-electron interactions. A beam made up of constant energy particles but with spatial divergence has been simulated for the purpose. The values of the minimum scattering yield and half width of the channelling dip are shown to be depth sensitive and agree well with the measured values. The de-pendence of yield on the angle of incidence has been found to give information of all three types of channelling. The critical angles for the three types of channelling and wavelength of planar oscilla-tions are consistent with the previous calculations