Typescript (photocopy).The emergent angular and energy distributions of 8-200 keV protons transmitted through thin (-oriented silicon membrane of 0.6 μm thickness, the half-width angle of the near Gaussian emergent particle distribution was 0.43° for an incident proton energy of 200 keV. The average energy loss of these particles was 10% less than for protons transmitted in random equivalent directions. Half-width angle measurements of the emergent distributions for the high-, intermediate-, and low-energy-loss components, as well as for the neutral component of the transmitted beam, are presented as functions of incident proton energy and film thickness for the major crystalline axes. Using nuclear and electronic multiple scattering theory...
Images of stacking faults in silicon have been produced using transmitted, channeled protons. They r...
We have studied theoretically angular distributions of relativistic protons axially channeled throug...
Images of stacking faults in silicon have been produced using transmitted, channeled protons. They r...
The azimuthal distributions of protons transmitted through thin silicon single crystals near the ⟨11...
Experimental energy loss measurements were made for protons of energy 0.5 to 1.6 MeV channeling thro...
Abstract. The channelling of 3 MeV protons in the h110i direction of silicon has been simulated usin...
A detailed study of the energy loss distributions of the relativistic protons axially channeled in t...
A detailed study of the energy loss distributions of the relativistic protons axially channeled in t...
This paper describes the observation of {110} planar oscillations of 3 MeV protons transmitted throu...
This paper describes the observation of {110} planar oscillations of 3 MeV protons transmitted throu...
This study provides a way to produce very accurate ion atom interaction potentials. We present the h...
This paper describes the observation of {110} planar oscillations of 3 MeV protons transmitted throu...
This paper describes the observation of {110} planar oscillations of 3 MeV protons transmitted throu...
Membranes of micrometer lateral sizes and nanometer thickness are nowadays routinely fabricated thro...
Monte Carlo channeling simulations for 3 MeV protons which are transmitted close to the [011] axis o...
Images of stacking faults in silicon have been produced using transmitted, channeled protons. They r...
We have studied theoretically angular distributions of relativistic protons axially channeled throug...
Images of stacking faults in silicon have been produced using transmitted, channeled protons. They r...
The azimuthal distributions of protons transmitted through thin silicon single crystals near the ⟨11...
Experimental energy loss measurements were made for protons of energy 0.5 to 1.6 MeV channeling thro...
Abstract. The channelling of 3 MeV protons in the h110i direction of silicon has been simulated usin...
A detailed study of the energy loss distributions of the relativistic protons axially channeled in t...
A detailed study of the energy loss distributions of the relativistic protons axially channeled in t...
This paper describes the observation of {110} planar oscillations of 3 MeV protons transmitted throu...
This paper describes the observation of {110} planar oscillations of 3 MeV protons transmitted throu...
This study provides a way to produce very accurate ion atom interaction potentials. We present the h...
This paper describes the observation of {110} planar oscillations of 3 MeV protons transmitted throu...
This paper describes the observation of {110} planar oscillations of 3 MeV protons transmitted throu...
Membranes of micrometer lateral sizes and nanometer thickness are nowadays routinely fabricated thro...
Monte Carlo channeling simulations for 3 MeV protons which are transmitted close to the [011] axis o...
Images of stacking faults in silicon have been produced using transmitted, channeled protons. They r...
We have studied theoretically angular distributions of relativistic protons axially channeled throug...
Images of stacking faults in silicon have been produced using transmitted, channeled protons. They r...