A reflective optical; element exhibits an increase in the maximum reflectivity at operating wavelengths in the extreme ultraviolet or soft x-ray wavelength range. A first additional intermediate layer (23a, 23b) and a second additional intermediate layer (24a, 24b) are provided between the absorber layer (22) and the spacer layer (21), wherein the first additional intermediate layer increases the reflectivity and the second additional intermediate layer (24a,b,) prevents chemical interaction between the first additional intermediate layer (23 a,b) and the adjoining spacer layer (21) and/or the absorber layer
The development of microelectronics is always driven by reducing transistor size and increasing inte...
The development of microelectronics is always driven by reducing transistor size and increasing inte...
Plasma based radiation sources optimized to emit 13.5 nm Extreme UV radiation also produce a signifi...
A reflective optical element e.g. for use in EUV lithography, configured for an operating wavelength...
An EUV mirror (1000) has a mirror element which forms a mirror surface of the mirror. The mirror ele...
An EUV mirror (1000) has a mirror element which forms a mirror surface of the mirror. The mirror ele...
In contrast to vacuum ultraviolet (VUV) and deep ultraviolet (DUV) light used for current lithograph...
Multilayer mirror coatings which reflect extreme ultraviolet (EUV) radiation are a key enabling tech...
Lithography applications beyond EUVL are expected to use 6.72 nm radiation. In this spectral region ...
An optical element comprising a reflective coating is specified, wherein the reflective coating comp...
The demand for enhanced optical resolution in order to structure and observe ever smaller details ha...
EUV lithography requires, because of the wavelength of 13.5 nm, all reflective optics which can be r...
We have demonstrated a hybrid extreme ultraviolet (EUV) multilayer mirror for 6.x nm radiation that ...
We have demonstrated a hybrid extreme ultraviolet (EUV) multilayer mirror for 6.x nm radiation that ...
We have demonstrated a hybrid extreme ultraviolet (EUV) multilayer mirror for 6.x nm radiation that ...
The development of microelectronics is always driven by reducing transistor size and increasing inte...
The development of microelectronics is always driven by reducing transistor size and increasing inte...
Plasma based radiation sources optimized to emit 13.5 nm Extreme UV radiation also produce a signifi...
A reflective optical element e.g. for use in EUV lithography, configured for an operating wavelength...
An EUV mirror (1000) has a mirror element which forms a mirror surface of the mirror. The mirror ele...
An EUV mirror (1000) has a mirror element which forms a mirror surface of the mirror. The mirror ele...
In contrast to vacuum ultraviolet (VUV) and deep ultraviolet (DUV) light used for current lithograph...
Multilayer mirror coatings which reflect extreme ultraviolet (EUV) radiation are a key enabling tech...
Lithography applications beyond EUVL are expected to use 6.72 nm radiation. In this spectral region ...
An optical element comprising a reflective coating is specified, wherein the reflective coating comp...
The demand for enhanced optical resolution in order to structure and observe ever smaller details ha...
EUV lithography requires, because of the wavelength of 13.5 nm, all reflective optics which can be r...
We have demonstrated a hybrid extreme ultraviolet (EUV) multilayer mirror for 6.x nm radiation that ...
We have demonstrated a hybrid extreme ultraviolet (EUV) multilayer mirror for 6.x nm radiation that ...
We have demonstrated a hybrid extreme ultraviolet (EUV) multilayer mirror for 6.x nm radiation that ...
The development of microelectronics is always driven by reducing transistor size and increasing inte...
The development of microelectronics is always driven by reducing transistor size and increasing inte...
Plasma based radiation sources optimized to emit 13.5 nm Extreme UV radiation also produce a signifi...