In contrast to vacuum ultraviolet (VUV) and deep ultraviolet (DUV) light used for current lithography technologies, extreme UV (EUV) light with a wavelength of 13.5 nm is strongly absorbed by any material. Optical coatings for infrared (IR), visible, and UV light are predominantly fabricated by thermal or electron beam evaporation. The fabrication of such demanding nanometer multilayers needed, for instance, for EUV lithography is only possible if accurate metrology tools are routinely available which enable the immediate inspection of the layer properties. One of the most powerful techniques for the characterization of EUV and X-ray reflection coatings is reflectometry. The steady power increase of EUV sources results not only in higher EU...
We present the results of coating the first set of optical elements for an alpha-class extreme-ultra...
By means of modern vacuum deposition technology, structures consisting of alternating layers of high...
The ever-decreasing pattern size of structures in integrated circuits requires lithography processes...
The demand for enhanced optical resolution in order to structure and observe ever smaller details ha...
Multilayer mirror coatings which reflect extreme ultraviolet (EUV) radiation are a key enabling tech...
Extreme ultraviolet (EUV) multilayer coatings are presently widely used in both science and technolo...
This thesis addresses research works on the development and metrology of multilayer thin-film coatin...
The topic of this paper is the fabrication and characterization of EUV reflective coatings based on ...
This thesis addresses research works on the development and metrology of multilayer thin-film coatin...
Abstract: Extreme ultraviolet lithography (EUVL) is widely seen as a key technology for future semic...
An overview is given of the progress in thin film and surface physics involved in multilayered syste...
An overview is given of the progress in thin film and surface physics involved in multilayered syste...
EUV lithography requires, because of the wavelength of 13.5 nm, all reflective optics which can be r...
EUV lithography (EUVL) employs illumination wavelengths around 13.5 nm, and in many aspects it is co...
Triggered by the roadmap of the semiconductor industry, tremendous progress has been achieved in the...
We present the results of coating the first set of optical elements for an alpha-class extreme-ultra...
By means of modern vacuum deposition technology, structures consisting of alternating layers of high...
The ever-decreasing pattern size of structures in integrated circuits requires lithography processes...
The demand for enhanced optical resolution in order to structure and observe ever smaller details ha...
Multilayer mirror coatings which reflect extreme ultraviolet (EUV) radiation are a key enabling tech...
Extreme ultraviolet (EUV) multilayer coatings are presently widely used in both science and technolo...
This thesis addresses research works on the development and metrology of multilayer thin-film coatin...
The topic of this paper is the fabrication and characterization of EUV reflective coatings based on ...
This thesis addresses research works on the development and metrology of multilayer thin-film coatin...
Abstract: Extreme ultraviolet lithography (EUVL) is widely seen as a key technology for future semic...
An overview is given of the progress in thin film and surface physics involved in multilayered syste...
An overview is given of the progress in thin film and surface physics involved in multilayered syste...
EUV lithography requires, because of the wavelength of 13.5 nm, all reflective optics which can be r...
EUV lithography (EUVL) employs illumination wavelengths around 13.5 nm, and in many aspects it is co...
Triggered by the roadmap of the semiconductor industry, tremendous progress has been achieved in the...
We present the results of coating the first set of optical elements for an alpha-class extreme-ultra...
By means of modern vacuum deposition technology, structures consisting of alternating layers of high...
The ever-decreasing pattern size of structures in integrated circuits requires lithography processes...