A reflective optical element e.g. for use in EUV lithography, configured for an operating wavelength in the soft X-ray or extreme ultraviolet wavelength range, includes a multilayer system (20) with respective layers of at least two alternating materials (21, 22) having differing real parts of the refractive index at the operating wavelength. Preferably, at least at an interface from the material (21) having the higher real part of the refractive index to the material (22) having the lower real part of the refractive index, a further layer (23) of a nitride or a carbide of the material (22) having the lower real part is arranged. Particularly preferably the material (22) having the lower real part of the refractive index is lanthanum or tho...
A reflector for EUV has additional multi-layers on the front surface of a base multilayer stack prov...
The development of microelectronics is always driven by reducing transistor size and increasing inte...
The development of microelectronics is always driven by reducing transistor size and increasing inte...
A reflective optical; element exhibits an increase in the maximum reflectivity at operating waveleng...
An optical element comprising a reflective coating is specified, wherein the reflective coating comp...
An EUV mirror (1000) has a mirror element which forms a mirror surface of the mirror. The mirror ele...
In contrast to vacuum ultraviolet (VUV) and deep ultraviolet (DUV) light used for current lithograph...
The invention relates to reflective optical elements for dynamically deflecting a laser beam and a p...
An EUV mirror (1000) has a mirror element which forms a mirror surface of the mirror. The mirror ele...
DE 10227367 A UPAB: 20040210 NOVELTY - Reflecting element comprises a first alternating layer system...
Lithography applications beyond EUVL are expected to use 6.72 nm radiation. In this spectral region ...
WO2003079062 A UPAB: 20031107 NOVELTY - Optical element has at least one layer forming a metallic fl...
EUV lithography requires, because of the wavelength of 13.5 nm, all reflective optics which can be r...
A method of manufacturing an X-ray optical element. The element consists of a body of a material hav...
A reflector for EUV has additional multi-layers on the front surface of a base multilayer stack prov...
A reflector for EUV has additional multi-layers on the front surface of a base multilayer stack prov...
The development of microelectronics is always driven by reducing transistor size and increasing inte...
The development of microelectronics is always driven by reducing transistor size and increasing inte...
A reflective optical; element exhibits an increase in the maximum reflectivity at operating waveleng...
An optical element comprising a reflective coating is specified, wherein the reflective coating comp...
An EUV mirror (1000) has a mirror element which forms a mirror surface of the mirror. The mirror ele...
In contrast to vacuum ultraviolet (VUV) and deep ultraviolet (DUV) light used for current lithograph...
The invention relates to reflective optical elements for dynamically deflecting a laser beam and a p...
An EUV mirror (1000) has a mirror element which forms a mirror surface of the mirror. The mirror ele...
DE 10227367 A UPAB: 20040210 NOVELTY - Reflecting element comprises a first alternating layer system...
Lithography applications beyond EUVL are expected to use 6.72 nm radiation. In this spectral region ...
WO2003079062 A UPAB: 20031107 NOVELTY - Optical element has at least one layer forming a metallic fl...
EUV lithography requires, because of the wavelength of 13.5 nm, all reflective optics which can be r...
A method of manufacturing an X-ray optical element. The element consists of a body of a material hav...
A reflector for EUV has additional multi-layers on the front surface of a base multilayer stack prov...
A reflector for EUV has additional multi-layers on the front surface of a base multilayer stack prov...
The development of microelectronics is always driven by reducing transistor size and increasing inte...
The development of microelectronics is always driven by reducing transistor size and increasing inte...