Natively textured ZnO layers deposited by the expanding thermal plasma CVD technique between 150 and 350°C at a deposition rate between 0.65 and 0.75 nm/s have been investigated with respect to their suitability as front electrode material for amorphous silicon pin solar cells in comparison to reference SnO2:F (Asahi U-type). At higher substrate temperature and with growing thickness, the surface roughness of the ZnO films increases. Layers with electrical (sheet resistance 80%) and morphological (surface texture) properties comparable to Asahi U-type SnO2:F have been obtained. Preliminary solar cells deposited on ZnO show an efficiency approaching 10%. cop. 2001 Elsevier Science B.V
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