A new method for low temperature deposition of surface textured ZnO is presented utilizing an expanding thermal plasma created by a cascaded arc. Films have been deposited at 150-350°C at a rate of typically 0.65-0.75 nm/s, exhibiting low sheet resistance (> 10 Ω/□), high transmittance (>80%) and a rough surface texture. Surface roughness increases with increasing deposition temperature and film thickness. First pin a-Si:H solar cells deposited on this ZnO show initial efficiencies approaching 10%.</p