AbstractThe bright lights illuminating our world in a myriad of ways will increasingly be made of Group III nitride materials. Government and industry resources are rapidly being channelled into this upstart among a growing variety of “blue light” entries. As the giant opto manufacturers ramp-up into serious production mode, and the electronic device work starts looking progressively more production-worthy… and with GaN bulk growers emerging on the scene, perhaps it's time for a reality check
Improvements in III-nitride technology continue apace in both opto- and microelectronic device perfo...
Despite of all successes in commercialization of GaN-based devices present knowledge of light emissi...
text早稲田大学創立125周年記念シンポジウム 半導体・ナノエレクトロニクス―技術立国日本のこれから― 2007年10月23日 早稲田大学国際会議場井深大記念ホールconference objec
Improvements in III-nitride technology continue apace in both opto- and microelectronic device perfo...
AbstractThere seems no doubt that the opto side of nitride development is headed for commercial succ...
AbstractIn tune with the growing importance of nitride devices, the biennial 4th International Confe...
AbstractRecent indicators as to the status the III-nitrides and related compound semiconductors — no...
AbstractA record number attended the Fall 1998 Materials Research Society (MRS) meeting in Boston fr...
AbstractThe Fall-99 MRS meeting opened in Boston following the traditional Thanksgiving Weekend holi...
AbstractFurther developments in continuous wave blue lasers and the ongoing search for improved subs...
Abstract2002 has seen a resurgence of interest in the development of GaN single crystal substrates. ...
Gallium nitride (GaN)-based solid state lighting technology has revolutionized the semiconductor ind...
Gallium nitride (GaN)-based solid state lighting technology has revolutionized the semiconductor ind...
Although not often reported as such, R&D, equipment and materials supply for III-nitride materials a...
AbstractThe first European Gallium Nitride Workshop (EGW-1) took place in Rigi, Switzerland, on June...
Improvements in III-nitride technology continue apace in both opto- and microelectronic device perfo...
Despite of all successes in commercialization of GaN-based devices present knowledge of light emissi...
text早稲田大学創立125周年記念シンポジウム 半導体・ナノエレクトロニクス―技術立国日本のこれから― 2007年10月23日 早稲田大学国際会議場井深大記念ホールconference objec
Improvements in III-nitride technology continue apace in both opto- and microelectronic device perfo...
AbstractThere seems no doubt that the opto side of nitride development is headed for commercial succ...
AbstractIn tune with the growing importance of nitride devices, the biennial 4th International Confe...
AbstractRecent indicators as to the status the III-nitrides and related compound semiconductors — no...
AbstractA record number attended the Fall 1998 Materials Research Society (MRS) meeting in Boston fr...
AbstractThe Fall-99 MRS meeting opened in Boston following the traditional Thanksgiving Weekend holi...
AbstractFurther developments in continuous wave blue lasers and the ongoing search for improved subs...
Abstract2002 has seen a resurgence of interest in the development of GaN single crystal substrates. ...
Gallium nitride (GaN)-based solid state lighting technology has revolutionized the semiconductor ind...
Gallium nitride (GaN)-based solid state lighting technology has revolutionized the semiconductor ind...
Although not often reported as such, R&D, equipment and materials supply for III-nitride materials a...
AbstractThe first European Gallium Nitride Workshop (EGW-1) took place in Rigi, Switzerland, on June...
Improvements in III-nitride technology continue apace in both opto- and microelectronic device perfo...
Despite of all successes in commercialization of GaN-based devices present knowledge of light emissi...
text早稲田大学創立125周年記念シンポジウム 半導体・ナノエレクトロニクス―技術立国日本のこれから― 2007年10月23日 早稲田大学国際会議場井深大記念ホールconference objec