AbstractIn tune with the growing importance of nitride devices, the biennial 4th International Conference on Nitride Semiconductors in Denver, CO, USA in July had a record attendance of over 540 registrants and a record number of papers. Improved performances were reported for both electronic and opto-electronic devices. Here we focus on opto developments, while in the next issue Part 2 will cover microelectrenic applications
AbstractThere seems no doubt that the opto side of nitride development is headed for commercial succ...
Although not often reported as such, R&D, equipment and materials supply for III-nitride materials a...
AbstractThanks to the dedicated efforts of an international community of researchers, and especially...
Improvements in III-nitride technology continue apace in both opto- and microelectronic device perfo...
AbstractThe bright lights illuminating our world in a myriad of ways will increasingly be made of Gr...
AbstractA record number attended the Fall 1998 Materials Research Society (MRS) meeting in Boston fr...
AbstractFurther developments in continuous wave blue lasers and the ongoing search for improved subs...
AbstractIn this article the business and technology of III–V semiconductor devices will be overviewe...
AbstractRecent indicators as to the status the III-nitrides and related compound semiconductors — no...
AbstractThe Fall-99 MRS meeting opened in Boston following the traditional Thanksgiving Weekend holi...
AbstractIn the first report from the Fall-99 Boston MRS wide-bandgap meeting (Part 1 in Issue 3, 200...
AbstractThe prospect of a multi-billion dollar market has attracted plenty of interest and activity ...
AbstractTremendous progress has been made in recent years in the growth, doping and processing techn...
Improvements in III-nitride technology continue apace in both opto- and microelectronic device perfo...
AbstractAt the 27th annual International Symposium on Compound Semiconductors in Monterey, CA, USA m...
AbstractThere seems no doubt that the opto side of nitride development is headed for commercial succ...
Although not often reported as such, R&D, equipment and materials supply for III-nitride materials a...
AbstractThanks to the dedicated efforts of an international community of researchers, and especially...
Improvements in III-nitride technology continue apace in both opto- and microelectronic device perfo...
AbstractThe bright lights illuminating our world in a myriad of ways will increasingly be made of Gr...
AbstractA record number attended the Fall 1998 Materials Research Society (MRS) meeting in Boston fr...
AbstractFurther developments in continuous wave blue lasers and the ongoing search for improved subs...
AbstractIn this article the business and technology of III–V semiconductor devices will be overviewe...
AbstractRecent indicators as to the status the III-nitrides and related compound semiconductors — no...
AbstractThe Fall-99 MRS meeting opened in Boston following the traditional Thanksgiving Weekend holi...
AbstractIn the first report from the Fall-99 Boston MRS wide-bandgap meeting (Part 1 in Issue 3, 200...
AbstractThe prospect of a multi-billion dollar market has attracted plenty of interest and activity ...
AbstractTremendous progress has been made in recent years in the growth, doping and processing techn...
Improvements in III-nitride technology continue apace in both opto- and microelectronic device perfo...
AbstractAt the 27th annual International Symposium on Compound Semiconductors in Monterey, CA, USA m...
AbstractThere seems no doubt that the opto side of nitride development is headed for commercial succ...
Although not often reported as such, R&D, equipment and materials supply for III-nitride materials a...
AbstractThanks to the dedicated efforts of an international community of researchers, and especially...