AbstractFurther developments in continuous wave blue lasers and the ongoing search for improved substrates were among the main themes of the ‘Third International Conference on Nitride Semiconductors (ICNS-3)’. Topics at the biennual conference, held in the beautiful French city of Montpellier from 5–9 July, covered a number of newer research areas as well, including a growing interest in silicon's role in III-nitride optoelectronics
AbstractIn spite of deep concerns about the spread of severe acute respiratory syndrome in Asia, the...
AbstractA record number attended the Fall 1998 Materials Research Society (MRS) meeting in Boston fr...
The properties of cubic nitrides grown by molecular beam epitaxy (MBE) on GaAs (001) have been studi...
AbstractFurther developments in continuous wave blue lasers and the ongoing search for improved subs...
AbstractRecent indicators as to the status the III-nitrides and related compound semiconductors — no...
Improvements in III-nitride technology continue apace in both opto- and microelectronic device perfo...
AbstractIn tune with the growing importance of nitride devices, the biennial 4th International Confe...
AbstractThe Fall-99 MRS meeting opened in Boston following the traditional Thanksgiving Weekend holi...
AbstractThe continuing search for suitable substrates was the focal point of the ‘Third European Wor...
Gallium nitride (GaN)-based solid state lighting technology has revolutionized the semiconductor ind...
Gallium nitride (GaN)-based solid state lighting technology has revolutionized the semiconductor ind...
The depth of Euronitride research continues to unfold as more results become available and, judging ...
Credited as "the most important semiconductor since silicon (Si)," gallium nitride (GaN) has receive...
AbstractAt the 27th annual International Symposium on Compound Semiconductors in Monterey, CA, USA m...
Abstract2002 has seen a resurgence of interest in the development of GaN single crystal substrates. ...
AbstractIn spite of deep concerns about the spread of severe acute respiratory syndrome in Asia, the...
AbstractA record number attended the Fall 1998 Materials Research Society (MRS) meeting in Boston fr...
The properties of cubic nitrides grown by molecular beam epitaxy (MBE) on GaAs (001) have been studi...
AbstractFurther developments in continuous wave blue lasers and the ongoing search for improved subs...
AbstractRecent indicators as to the status the III-nitrides and related compound semiconductors — no...
Improvements in III-nitride technology continue apace in both opto- and microelectronic device perfo...
AbstractIn tune with the growing importance of nitride devices, the biennial 4th International Confe...
AbstractThe Fall-99 MRS meeting opened in Boston following the traditional Thanksgiving Weekend holi...
AbstractThe continuing search for suitable substrates was the focal point of the ‘Third European Wor...
Gallium nitride (GaN)-based solid state lighting technology has revolutionized the semiconductor ind...
Gallium nitride (GaN)-based solid state lighting technology has revolutionized the semiconductor ind...
The depth of Euronitride research continues to unfold as more results become available and, judging ...
Credited as "the most important semiconductor since silicon (Si)," gallium nitride (GaN) has receive...
AbstractAt the 27th annual International Symposium on Compound Semiconductors in Monterey, CA, USA m...
Abstract2002 has seen a resurgence of interest in the development of GaN single crystal substrates. ...
AbstractIn spite of deep concerns about the spread of severe acute respiratory syndrome in Asia, the...
AbstractA record number attended the Fall 1998 Materials Research Society (MRS) meeting in Boston fr...
The properties of cubic nitrides grown by molecular beam epitaxy (MBE) on GaAs (001) have been studi...