In the last decades CMOS technology has undergone an extraordinary evolution. Thanks to the continuous scaling process, CMOS transistors are now so small that millions can be easily fitted in a single chip. Shrinking transistor sizes has complex consequences on the performance of both the transistor itself and the system that is based upon it. Understanding and teaching the CMOS scaling process and its consequences on circuits is an increasingly difficult task. Furthermore the scaling process is reaching an end, due to the continuously growing fabrication costs and the unavoidable physical limits on the smallest size achievable. As a consequence many emerging technologies, like carbon nanotubes and nanowires, are being studied as possible C...
In this book, we aim to address the ever-advancing progress in microelectronic device scaling. Compl...
A CMOS technology for educational activities and academic projects has been performed. The CMOS devi...
AbstractThis paper briefly discusses the development of Metal Oxide Semiconductor Field Effect Trans...
We presented here a web-based tool, named TAMTAMS that can accurately calculate the IV characteristi...
In order to assure the best learning experience, the teaching activity in Electronic Engineering is ...
Od pojave tehnologije integriranog sklopa, elektronička industrija bilježi nezapamćen razvoj, vršeći...
To meet the challenges associated with transistor scaling and short channel devices, the structure o...
To meet the challenges associated with transistor scaling and short channel devices, the structure o...
The current trend in scaling transistor gate length below 60 nm is posing great challenges both rela...
The core of this thesis is a thorough investigation of the scaling properties of conventional nano-C...
According to Moore‟s Law, the no of transistors in an IC chip doubles every 18 months. This leads in...
In this paper an overview on the main issues in analog IC design in scaled CMOS technology is presen...
The international technology roadmap of semiconductors (ITRS) is approaching the historical end poin...
The international technology roadmap of semiconductors (ITRS) is approaching the historical end poin...
This book explains in layman’s terms how CMOS transistors work. The author explains step-by-step how...
In this book, we aim to address the ever-advancing progress in microelectronic device scaling. Compl...
A CMOS technology for educational activities and academic projects has been performed. The CMOS devi...
AbstractThis paper briefly discusses the development of Metal Oxide Semiconductor Field Effect Trans...
We presented here a web-based tool, named TAMTAMS that can accurately calculate the IV characteristi...
In order to assure the best learning experience, the teaching activity in Electronic Engineering is ...
Od pojave tehnologije integriranog sklopa, elektronička industrija bilježi nezapamćen razvoj, vršeći...
To meet the challenges associated with transistor scaling and short channel devices, the structure o...
To meet the challenges associated with transistor scaling and short channel devices, the structure o...
The current trend in scaling transistor gate length below 60 nm is posing great challenges both rela...
The core of this thesis is a thorough investigation of the scaling properties of conventional nano-C...
According to Moore‟s Law, the no of transistors in an IC chip doubles every 18 months. This leads in...
In this paper an overview on the main issues in analog IC design in scaled CMOS technology is presen...
The international technology roadmap of semiconductors (ITRS) is approaching the historical end poin...
The international technology roadmap of semiconductors (ITRS) is approaching the historical end poin...
This book explains in layman’s terms how CMOS transistors work. The author explains step-by-step how...
In this book, we aim to address the ever-advancing progress in microelectronic device scaling. Compl...
A CMOS technology for educational activities and academic projects has been performed. The CMOS devi...
AbstractThis paper briefly discusses the development of Metal Oxide Semiconductor Field Effect Trans...