Design And Optimization Of A 32V，0.13μm Versatile LDMOS Technology

[[abstract]]Accompanied by the development of the semiconductor industry, high power de-vices are often applied in a lot of electronic devices. The structures of power device basically have two forms: vertical and horizontal structures; however the lateral double diffused device (LDMOS) will represent the current state-of-art in power devices. In this thesis, by focusing on the double diffused devices and their electrical characteristics simulated by TSuprem4, a device of 0.13μm channel and 1.5／6／32V is simulated by Medici with four types of implant masks and different N-drift dose densities to analyze the electrical breakdown voltages and the differences among them. By varying vertical depths of VVD, the advantages of low on-state resistance and the manufacturability of VVD are further investigated. Finally the Kink Effects produced by four types of structures and the impact of vertical depths and angles on Kink Effects of VVD are obtained in this thesis