Add to ORKGThis report investigates ionization induced surface effects on transistors."NASA CR-1566."Issued by Originator as Boeing Doc. D2-125680-3."July 1970"--Cover.Includes bibliographical references.This report investigates ionization induced surface effects on transistors.Prepared by the Boeing Company, Seattle Wash. for Goddard Space Flight CenterMode of access: Internet
The physical mechanisms for gain degradation in laterals PNP bipolar transistors are examined experi...
The paper first describes the basic radiation-induced mechanisms such as transient effects, ionizati...
Radiation effects on silicon - degradation of carrier lifetime in N and P type silicon samples expos...
Ionizing radiation effects on transistor surfaces in vacuum or ambient nitrogen environmen
Space radiation equivalences for permanent damage to silicon transistors by measuring changes in tra...
Ionizing radiation effects on transistor surfaces - facilities, fixtures, and instrumentation checke...
A search of literature concerning the long term effects of nuclear radiation on electronic parts was...
587-590MOSFET is a basic component of VLSI and ULSI circuits and finds applications in many electron...
Semiconductor devices are playing a vital role in the industry of integrated circuits and solid sta...
The effects of radiation on Nano-Scale Transistors is a primary concern for space level applications...
High energy electron irradiation effects on field effect transistors in integrated circuit device
The effect of ionizing radiation on the output conductance of a short-channel MOS transistor is exam...
Modeling gain degradation in bipolar junction transistors due to ionizing radiation and hot-carrier ...
This paper describes the effect of 8 MeV electron beam on the forward current gain of space borne co...
In this paper experimental results on radiation effects on a BICMOS high speed commercial technology...
The physical mechanisms for gain degradation in laterals PNP bipolar transistors are examined experi...
The paper first describes the basic radiation-induced mechanisms such as transient effects, ionizati...
Radiation effects on silicon - degradation of carrier lifetime in N and P type silicon samples expos...
Ionizing radiation effects on transistor surfaces in vacuum or ambient nitrogen environmen
Space radiation equivalences for permanent damage to silicon transistors by measuring changes in tra...
Ionizing radiation effects on transistor surfaces - facilities, fixtures, and instrumentation checke...
A search of literature concerning the long term effects of nuclear radiation on electronic parts was...
587-590MOSFET is a basic component of VLSI and ULSI circuits and finds applications in many electron...
Semiconductor devices are playing a vital role in the industry of integrated circuits and solid sta...
The effects of radiation on Nano-Scale Transistors is a primary concern for space level applications...
High energy electron irradiation effects on field effect transistors in integrated circuit device
The effect of ionizing radiation on the output conductance of a short-channel MOS transistor is exam...
Modeling gain degradation in bipolar junction transistors due to ionizing radiation and hot-carrier ...
This paper describes the effect of 8 MeV electron beam on the forward current gain of space borne co...
In this paper experimental results on radiation effects on a BICMOS high speed commercial technology...
The physical mechanisms for gain degradation in laterals PNP bipolar transistors are examined experi...
The paper first describes the basic radiation-induced mechanisms such as transient effects, ionizati...
Radiation effects on silicon - degradation of carrier lifetime in N and P type silicon samples expos...