Add to ORKGThe physical mechanisms for gain degradation in laterals PNP bipolar transistors are examined experimentally and through simulation. The effect of increased surface recombination velocity at the base surface is moderated by positive oxide charge
The experimentally observed trends in the total-dose gain-degradation response of modern, BiCMOS com...
A physical model is developed to quantify the contribution of oxide-trapped charge to enhanced low-d...
Abstract—Performance and properties of bipolar junction transistor (BJT) devices are affected due to...
The effect of dose rate on radiation-induced gain degradation is compared for verticle npn and later...
The roles of net positive oxide trapped charge and surface recombination velocity in producing exces...
Low dose rate gain degradation of lateral pnp bipolar transistors can be simulated by accelerated ir...
The sensitivity to radiation-induced degradation of new double-gate-controlled lateral NPN bipolar t...
The current gain of bipolar junction transistors is reduced due to ionizing radiation exposure or ho...
The operation of power lateral pnp transistors in gamma radiation field was examined by detection o...
A physical model is developed to quantify the contribution of oxide-trapped charge to enhanced low-...
Oxide trapped charge, field effects from emitter metallization, and high level injection phenomena m...
This paper describes the results of the effect of 24 MeV proton and 60Co γ-irradn. on the collector...
Gate controlled NPN bipolar transistors were irradiated with doses ranging between 10 and 104 Gy X r...
This paper describes the effect of 8 MeV electron beam on the forward current gain of space borne co...
International audienceThe effect of dose on NPN bipolar junction transistors is investigated for irr...
The experimentally observed trends in the total-dose gain-degradation response of modern, BiCMOS com...
A physical model is developed to quantify the contribution of oxide-trapped charge to enhanced low-d...
Abstract—Performance and properties of bipolar junction transistor (BJT) devices are affected due to...
The effect of dose rate on radiation-induced gain degradation is compared for verticle npn and later...
The roles of net positive oxide trapped charge and surface recombination velocity in producing exces...
Low dose rate gain degradation of lateral pnp bipolar transistors can be simulated by accelerated ir...
The sensitivity to radiation-induced degradation of new double-gate-controlled lateral NPN bipolar t...
The current gain of bipolar junction transistors is reduced due to ionizing radiation exposure or ho...
The operation of power lateral pnp transistors in gamma radiation field was examined by detection o...
A physical model is developed to quantify the contribution of oxide-trapped charge to enhanced low-...
Oxide trapped charge, field effects from emitter metallization, and high level injection phenomena m...
This paper describes the results of the effect of 24 MeV proton and 60Co γ-irradn. on the collector...
Gate controlled NPN bipolar transistors were irradiated with doses ranging between 10 and 104 Gy X r...
This paper describes the effect of 8 MeV electron beam on the forward current gain of space borne co...
International audienceThe effect of dose on NPN bipolar junction transistors is investigated for irr...
The experimentally observed trends in the total-dose gain-degradation response of modern, BiCMOS com...
A physical model is developed to quantify the contribution of oxide-trapped charge to enhanced low-d...
Abstract—Performance and properties of bipolar junction transistor (BJT) devices are affected due to...