A comparative study of radiation effects on CMOS and FINFET nano scale transistors in space applications

The effects of radiation on Nano-Scale Transistors is a primary concern for space level applications. As electronic components have decreased in size to a Nano-scale level and their resulting increase in complexity, their enhanced sensitivity have become a source of a major concern to space-craft engineers and generally in space exploration. Therefore, the determination of how radiation propagates through materials and how radiation affects Nano scale transistors have become a hot topic in the design of modern spacecraft. Since CMOS was introduced in 1963 by Frank Wanlass at Fairchild Semiconductor in San Jose, California, a lot of work has been done in the study of radiation effects on semiconductor devices, but not many comparative studies have been done on CMOS and FinFET which are the most relevant transistor technologies in use today. This study presents the comparative study of radiation effects on CMOS and FinFET semiconductor devices in space plications, considering the change in device parameters under diverse radiation damages