Radiation effects on custom MOS devices

This Thesis consists of four chapters: The first is primarily for background information on the effects of radiation on MOS devices and the theory of wafer bonding; the second gives a full discussion of all practical work carried out for manufacture of Field Effect test Capacitors, the third discusses manufacture of vacuum insulator Field Effect Transistors (FET's) and the fourth discusses the testing of these devices. Using a thermally bonded field effect capacitor structure, a vacuum dielectric was studied for use in high radiation environments with a view to manufacturing a CMOS compatible, micro machined transistor. Results are given in the form of high frequency C-V curves before and after a 120 kGy(Si), 12 MRad(Si), dose from a Co"6"0 source showing a 1 Volt shift. The work is then extended to the design and manufacture of a micro machined, under-etch technique, Field Effect Transistor for use in high radiation areas. Results are shown for Threshold, Subthreshold and Transfer characteristics before and after irradiation up to a total dose of 100kGy or 10MRad. The conclusion from this work is that it should be possible to commercially manufacture practical vacuum dielectric field effect transistors which are radiation hard to at least 120 kGy(Si). (author)SIGLEAvailable from British Library Document Supply Centre-DSC:DXN031127 / BLDSC - British Library Document Supply CentreGBUnited Kingdo