[[abstract]]A new CMOS-process-compatible programmable contact antifuse (PCAF) cell is presented in this letter for advance programmable logic applications. This innovative PCAF cell adapts an oxide layer formed by the etched resist-protection oxide layer under a properly designed contact region, which results in a highly scalable one-time-programmable solution for advance logic circuits. A subcircuit model describing the - characteristics of the antifuse cell before and after program is developed to facilitate the future PCAF memory macro design.[[fileno]]2030158010073[[department]]電機工程學
[[abstract]]© 2005 Japanese Journal of Applied Physics-novel electrically erasable programmable logi...
Les mémoires non-volatiles programmables une fois sont en plein essor dans le monde de l électroniqu...
Les mémoires non volatiles intégrées représentent une part importante du marché des semi-conducteurs...
[[abstract]]A multilevel oxide antifuse cell with programmable contact, fully compatible with a stan...
[[abstract]]A new fully CMOS process compatible anti-fuse device with programmable contact has been ...
A very compact one-time-programmable memory consisting of an oxide antifuse and a polysilicon diode ...
[[abstract]]A new gateless anti-fuse cell with 45nm CMOS fully compatible process has been developed...
This letter describes the formation of one-time-programmable (OTP) memory using standard contact fus...
While CMOS continues to be the technology of choice to enable a low-cost Radio Frequency Identificat...
Non-volatile one-time programmable memories are gaining an ever growing interest in embedded electro...
This letter describes the formation of one-time-programmable (OTP) memory using standard contact fus...
Abstract A CMOS flip-flop cell which can be used in counters is designed. SPICE model, the transient...
[[abstract]]This letter presents a new 2-bit/cell contact-gated one-time-programmable (OTP) device, ...
Abstract—This paper introduces two new cells for Logic-in-Memory (LiM) operation. The first novelty ...
A Write-Once-Read-Many (WORM) memory using a CMOS-compatible Antifuse (AF) element for low-cost nonv...
[[abstract]]© 2005 Japanese Journal of Applied Physics-novel electrically erasable programmable logi...
Les mémoires non-volatiles programmables une fois sont en plein essor dans le monde de l électroniqu...
Les mémoires non volatiles intégrées représentent une part importante du marché des semi-conducteurs...
[[abstract]]A multilevel oxide antifuse cell with programmable contact, fully compatible with a stan...
[[abstract]]A new fully CMOS process compatible anti-fuse device with programmable contact has been ...
A very compact one-time-programmable memory consisting of an oxide antifuse and a polysilicon diode ...
[[abstract]]A new gateless anti-fuse cell with 45nm CMOS fully compatible process has been developed...
This letter describes the formation of one-time-programmable (OTP) memory using standard contact fus...
While CMOS continues to be the technology of choice to enable a low-cost Radio Frequency Identificat...
Non-volatile one-time programmable memories are gaining an ever growing interest in embedded electro...
This letter describes the formation of one-time-programmable (OTP) memory using standard contact fus...
Abstract A CMOS flip-flop cell which can be used in counters is designed. SPICE model, the transient...
[[abstract]]This letter presents a new 2-bit/cell contact-gated one-time-programmable (OTP) device, ...
Abstract—This paper introduces two new cells for Logic-in-Memory (LiM) operation. The first novelty ...
A Write-Once-Read-Many (WORM) memory using a CMOS-compatible Antifuse (AF) element for low-cost nonv...
[[abstract]]© 2005 Japanese Journal of Applied Physics-novel electrically erasable programmable logi...
Les mémoires non-volatiles programmables une fois sont en plein essor dans le monde de l électroniqu...
Les mémoires non volatiles intégrées représentent une part importante du marché des semi-conducteurs...