45nm gateless anti-fuse cell with CMOS fully compatible process

[[abstract]]A new gateless anti-fuse cell with 45nm CMOS fully compatible process has been developed for advanced programmable logic applications. This gateless anti-fuse cell processed by pure logic process and decoupled with logic gate oxide has a highly stable and five orders of on/off current window. It also exhibits superior program performance by only 5V operation with no more than 10μA programming current. This new nitride gateless anti-fuse cell is a very promising logic OTP solution with fully CMOS compatible process below 90nm node.[[fileno]]2030131030002[[department]]電機工程學