MOSFET carrier mobility model based on the density-of-state at the DC-centroid in the quantized inversion layer

[[abstract]]We have developed a new MOSFET carrier mobility model based on the density-of-states at the DC-centroid which exhibits a universal behavior with respect to Eeff without incorporating surface roughness. This model can accurately predict the universal mobility on the high Eeff regime where previous models break down. An important conclusion from this work is that the modifications to process conditions intended to change surface roughness will not improve mobility[[fileno]]2030158030003[[department]]電機工程學