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In this paper, a critical review of various models for the effective mobility of charge carriers in metal oxide semiconductor field effect transistor (MOSFET) inversion layer (p and n type) has been done. Analytical, empirical and numerical models for carrier mobility have been reviewed and compared. Both strained silicon and unstrained silicon MOSFET cases have been studied. Depending upon their accuracy and simplicity, certain models have been identified to be applicable for mobility determination in strained and unstrained MOSFETs