We investigate the electronic and optical properties of InAs double quantum dots grown on GaAs (001) and laterally aligned along the [110] crystal direction. The emission spectrum has been investigated as a function of a lateral electric field applied along the quantum dot pair mutual axis. The number of confined electrons can be controlled with the external bias, leading to sharp energy shifts which we use to identify the emission from neutral and charged exciton complexes. Quantum tunneling of these electrons is proposed to explain the reversed ordering of the trion emission lines as compared to that of excitons in our system
Tunneling between two quantum dots is studied at low temperatures. The quantum dots are formed by th...
1.3 $\mu $m room temperature emitting multiple-stacked InAs/GaAs(001) quantum dots (QDs) are grown ...
We investigate the linear-response conductance through a pair of coupled quantum dots. The conductan...
We investigate the electronic and optical properties of InAs double quantum dots grown on GaAs (001)...
We calculate the emission spectrum of neutral and charged excitons in a pair of laterally coupled In...
Doty, Matthew F.Over the past decade, potential device applications have fueled an extensive effort...
We report the observation of enhanced charge-carrier redistribution in laterally organized and coupl...
Lateral quantum coupling between two self-assembled (In,Ga)As quantum dots has been observed. Photo...
Trabajo presentado a la "11th International Conference on Optics of Excitons in Confined Systems" (O...
We use photoluminescence spectroscopy to investigate the ground state of single self-assembled InGaA...
Trabajo presentado en la International Conference on the physics of semiconductors, celebrado en Seú...
We report on the fabrication, detailed characterization and modeling of lateral InGaAs quantum dot m...
We review results of our modeling of excitons and excitonic trions confined in vertically stacked In...
Semiconductor quantum dots (QDs) are fascinating systems for potential applications in quantum infor...
Semiconductor quantum dots (QDs) are fascinating systems for potential applications in quantum infor...
Tunneling between two quantum dots is studied at low temperatures. The quantum dots are formed by th...
1.3 $\mu $m room temperature emitting multiple-stacked InAs/GaAs(001) quantum dots (QDs) are grown ...
We investigate the linear-response conductance through a pair of coupled quantum dots. The conductan...
We investigate the electronic and optical properties of InAs double quantum dots grown on GaAs (001)...
We calculate the emission spectrum of neutral and charged excitons in a pair of laterally coupled In...
Doty, Matthew F.Over the past decade, potential device applications have fueled an extensive effort...
We report the observation of enhanced charge-carrier redistribution in laterally organized and coupl...
Lateral quantum coupling between two self-assembled (In,Ga)As quantum dots has been observed. Photo...
Trabajo presentado a la "11th International Conference on Optics of Excitons in Confined Systems" (O...
We use photoluminescence spectroscopy to investigate the ground state of single self-assembled InGaA...
Trabajo presentado en la International Conference on the physics of semiconductors, celebrado en Seú...
We report on the fabrication, detailed characterization and modeling of lateral InGaAs quantum dot m...
We review results of our modeling of excitons and excitonic trions confined in vertically stacked In...
Semiconductor quantum dots (QDs) are fascinating systems for potential applications in quantum infor...
Semiconductor quantum dots (QDs) are fascinating systems for potential applications in quantum infor...
Tunneling between two quantum dots is studied at low temperatures. The quantum dots are formed by th...
1.3 $\mu $m room temperature emitting multiple-stacked InAs/GaAs(001) quantum dots (QDs) are grown ...
We investigate the linear-response conductance through a pair of coupled quantum dots. The conductan...