We use photoluminescence spectroscopy to investigate the ground state of single self-assembled InGaAs lateral quantum dot molecules. We apply a voltage along the growth direction that allows us to control the total charge occupancy of the quantum dot molecule. Using a combination of computational modeling and experimental analysis, we assign the observed discrete spectral lines to specific charge distributions. We explain the dynamic processes that lead to these charge configurations through electrical injection and optical generation. Our systemic analysis provides evidence of interdot tunneling of electrons as predicted in previous theoretical work
Scanning-tunneling microscope induced luminescence at low temperature has been used to study the car...
Scanning-tunneling microscope induced luminescence at low temperature has been used to study the car...
InAs quantum dot molecules (QDMs) formed by molecular-beam epitaxy on GaAs (311)B substrates through...
We use photoluminescence spectroscopy to investigate the ground state of single self-assembled InGaA...
We investigate the electronic and optical properties of InAs double quantum dots grown on GaAs (001)...
We report on the fabrication, detailed characterization and modeling of lateral InGaAs quantum dot m...
We calculate the emission spectrum of neutral and charged excitons in a pair of laterally coupled In...
Doty, Matthew F.Over the past decade, potential device applications have fueled an extensive effort...
Trabajo presentado a la "11th International Conference on Optics of Excitons in Confined Systems" (O...
We have performed detailed photoluminescence (PL) and absorption spectroscopy on the same single sel...
Trabajo presentado en la International Conference on the physics of semiconductors, celebrado en Seú...
We investigate the emission dynamics of InAs/GaAs quantum dots (QDs) coupled to an InGaAs quantum we...
InAs quantum dot molecules (QDMs) formed by molecular-beam epitaxy on GaAs (311)B substrates through...
InAs quantum dot molecules (QDMs) formed by molecular-beam epitaxy on GaAs (311)B substrates through...
Scanning-tunneling microscope induced luminescence at low temperature has been used to study the car...
Scanning-tunneling microscope induced luminescence at low temperature has been used to study the car...
Scanning-tunneling microscope induced luminescence at low temperature has been used to study the car...
InAs quantum dot molecules (QDMs) formed by molecular-beam epitaxy on GaAs (311)B substrates through...
We use photoluminescence spectroscopy to investigate the ground state of single self-assembled InGaA...
We investigate the electronic and optical properties of InAs double quantum dots grown on GaAs (001)...
We report on the fabrication, detailed characterization and modeling of lateral InGaAs quantum dot m...
We calculate the emission spectrum of neutral and charged excitons in a pair of laterally coupled In...
Doty, Matthew F.Over the past decade, potential device applications have fueled an extensive effort...
Trabajo presentado a la "11th International Conference on Optics of Excitons in Confined Systems" (O...
We have performed detailed photoluminescence (PL) and absorption spectroscopy on the same single sel...
Trabajo presentado en la International Conference on the physics of semiconductors, celebrado en Seú...
We investigate the emission dynamics of InAs/GaAs quantum dots (QDs) coupled to an InGaAs quantum we...
InAs quantum dot molecules (QDMs) formed by molecular-beam epitaxy on GaAs (311)B substrates through...
InAs quantum dot molecules (QDMs) formed by molecular-beam epitaxy on GaAs (311)B substrates through...
Scanning-tunneling microscope induced luminescence at low temperature has been used to study the car...
Scanning-tunneling microscope induced luminescence at low temperature has been used to study the car...
Scanning-tunneling microscope induced luminescence at low temperature has been used to study the car...
InAs quantum dot molecules (QDMs) formed by molecular-beam epitaxy on GaAs (311)B substrates through...