Emission properties of single InAs/GaAs quantum dot pairs and molecules grown in GaAs nanoholes

Trabajo presentado a la "11th International Conference on Optics of Excitons in Confined Systems" (OECS), celebrada en en Madrid (España) del 7 al 11 de Septiembre de 2009.We have studied the lateral coupling between InAs/GaAs quantum dot pairs embedded in a field-effect structure. Quantum dot pairs and molecules have been identified by the correlated evolution of the Coulomb blockade features of each QD in the pair. This behaviour is largely distorted in the presence of resonant coupling states in the QD molecule. Single QD voltage evolution shows a crossover in the lineshape profile, which is associated to Spectral Diffusion processes due to residual charged environment.The authors gratefully acknowledge financial support by Spanish Ministry of Science and Innovation through grants NANINPHO-QD (TEC-2008-06756-C03-01/03) and Consolider-Ingenio 2010 QOIT(CSD2006-0019) and CAM (S-505/ESP/000200).Peer reviewe