Terahertz intersubband emission from silicon-germanium quantum cascades
- Kelsall, R. W.
- Ikonic, Z.
- Harrison, Paul
- Lynch, Stephen Anthony
- Bates, R.
- Paul, D. J.
- Norris, D. J.
- Liew, San Lin
- Cullis, A. G.
- Robbins, D. J.
- Murzyn, P.
- Pidgeon, C. R.
- Arnone, D. D.
DOIAbstract
Terahertz electroluminescence due to light hole-heavy hole intersubband transitions in p-type Si/SiGe quantum cascade structures has been observed in both surface-normal and edge emission geometries. THz output powers of up to 50 nW have been observed for surface emission from 100 period Si0.76Ge0.24/Si heterostructures grown on a Si0.8Ge0.2 relaxed buffer or 'virtual substrate'
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