THz intersubband emitter based on silicon
- Stark D.
- Mirza M.
- Persichetti L.
- Montanari M.
- Markmann S.
- Beck M.
- Grange T.
- Birner S.
- Virgilio M.
- Ciano C.
- Ortolani M.
- Corley C.
- Capellini G.
- Di Gaspare L.
- De Seta M.
- Paul D. J.
- Faist J.
- Scalari G.
Publication date
January 2021
DOI Publisher
Institute of Electrical and Electronics Engineers (IEEE)Abstract
We present THz quantum cascade emitters realized on a Si substrate. The emission centered at 3.4 and 4.9 THz originates from L-valley transitions in strain-compensated n-Type Ge/SiGe heterostructures. This is an important step towards the realization of Si-based THz quantum cascade lasers
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