We show control of the crystal structure of indium phosphide (InP) and gallium phosphide (GaP) nanowires by impurity dopants. More importantly, we demonstrate that we can, once we have enforced the zinc blende crystal structure, induce twinning superlattices with long-range order in the length direction in the nanowires. The spacing of the superlattices is tuned by the wire diameter and the zinc dopant concentration. These findings have been quantitatively modelled based on the cross-sectional shape of the zinc-blende nanowires.</p
The opportunity to engineer III-V nanowires in wurtzite and zinc blende crystal structure allows for...
we present results that provide fundamental insights on how to experimentally tailor the planar defe...
Zinc phosphide (Zn3P2) nanowires constitute prospective building blocks for next generation solar ce...
We show control of the crystal structure of indium phosphide (InP) and gallium phosphide (GaP) nanow...
We show control of the crystal structure of indium phosphide (InP) and gallium phosphide (GaP) nanow...
We show control of the crystal structure of indium phosphide (InP) and gallium phosphide (GaP) nanow...
We show control of the crystal structure of indium phosphide (InP) and gallium phosphide (GaP) nanow...
\u3cp\u3eWe show control of the crystal structure of indium phosphide (InP) and gallium phosphide (G...
Semiconducting nanowires offer the possibility of nearly unlimited complex bottom-up design, which a...
Semiconducting nanowires offer the possibility of nearly unlimited complex bottom-up design, which a...
Semiconducting nanowires offer the possibility of nearly unlimited complex bottom-up design, which a...
Semiconducting nanowires offer the possibility of nearly unlimited complex bottom-up design, which a...
Semiconducting nanowires offer the possibility of nearly unlimited complex bottom-up design, which a...
Zinc phosphide (Zn3P2) nanowires constitute prospective building blocks for next generation solar ce...
Zinc phosphide (Zn3P2) nanowires constitute prospective building blocks for next generation solar ce...
The opportunity to engineer III-V nanowires in wurtzite and zinc blende crystal structure allows for...
we present results that provide fundamental insights on how to experimentally tailor the planar defe...
Zinc phosphide (Zn3P2) nanowires constitute prospective building blocks for next generation solar ce...
We show control of the crystal structure of indium phosphide (InP) and gallium phosphide (GaP) nanow...
We show control of the crystal structure of indium phosphide (InP) and gallium phosphide (GaP) nanow...
We show control of the crystal structure of indium phosphide (InP) and gallium phosphide (GaP) nanow...
We show control of the crystal structure of indium phosphide (InP) and gallium phosphide (GaP) nanow...
\u3cp\u3eWe show control of the crystal structure of indium phosphide (InP) and gallium phosphide (G...
Semiconducting nanowires offer the possibility of nearly unlimited complex bottom-up design, which a...
Semiconducting nanowires offer the possibility of nearly unlimited complex bottom-up design, which a...
Semiconducting nanowires offer the possibility of nearly unlimited complex bottom-up design, which a...
Semiconducting nanowires offer the possibility of nearly unlimited complex bottom-up design, which a...
Semiconducting nanowires offer the possibility of nearly unlimited complex bottom-up design, which a...
Zinc phosphide (Zn3P2) nanowires constitute prospective building blocks for next generation solar ce...
Zinc phosphide (Zn3P2) nanowires constitute prospective building blocks for next generation solar ce...
The opportunity to engineer III-V nanowires in wurtzite and zinc blende crystal structure allows for...
we present results that provide fundamental insights on how to experimentally tailor the planar defe...
Zinc phosphide (Zn3P2) nanowires constitute prospective building blocks for next generation solar ce...