Zinc phosphide (Zn3P2) nanowires constitute prospective building blocks for next generation solar cells due to the combination of suitable optoelectronic properties and an abundance of the constituting elements in the Earth's crust. The generation of periodic superstructures along the nanowire axis could provide an additional mechanism to tune their functional properties. Here we present the vapour–liquid–solid growth of zinc phosphide superlattices driven by periodic heterotwins. This uncommon planar defect involves the exchange of Zn by In at the twinning boundary. We find that the zigzag superlattice formation is driven by reduction of the total surface energy of the liquid droplet. The chemical variation across the heterotwin does not a...
We show control of the crystal structure of indium phosphide (InP) and gallium phosphide (GaP) nanow...
We show control of the crystal structure of indium phosphide (InP) and gallium phosphide (GaP) nanow...
We show control of the crystal structure of indium phosphide (InP) and gallium phosphide (GaP) nanow...
Zinc phosphide (Zn3P2) nanowires constitute prospective building blocks for next generation solar ce...
Zinc phosphide (Zn3P2) nanowires constitute prospective building blocks for next generation solar ce...
Semiconducting nanowires offer the possibility of nearly unlimited complex bottom-up design, which a...
Semiconducting nanowires offer the possibility of nearly unlimited complex bottom-up design, which a...
Semiconducting nanowires offer the possibility of nearly unlimited complex bottom-up design, which a...
Semiconducting nanowires offer the possibility of nearly unlimited complex bottom-up design, which a...
Semiconducting nanowires offer the possibility of nearly unlimited complex bottom-up design, which a...
Semiconductors made of earth-abundant elements, such as zinc phosphide, have the potential to substi...
Growth approaches that limit the interface area between layers to nanoscale regions are emerging as ...
Growth approaches that limit the interface area between layers to nanoscale regions are emerging as ...
Growth approaches that limit the interface area between layers to nanoscale regions are emerging as ...
\u3cp\u3eWe show control of the crystal structure of indium phosphide (InP) and gallium phosphide (G...
We show control of the crystal structure of indium phosphide (InP) and gallium phosphide (GaP) nanow...
We show control of the crystal structure of indium phosphide (InP) and gallium phosphide (GaP) nanow...
We show control of the crystal structure of indium phosphide (InP) and gallium phosphide (GaP) nanow...
Zinc phosphide (Zn3P2) nanowires constitute prospective building blocks for next generation solar ce...
Zinc phosphide (Zn3P2) nanowires constitute prospective building blocks for next generation solar ce...
Semiconducting nanowires offer the possibility of nearly unlimited complex bottom-up design, which a...
Semiconducting nanowires offer the possibility of nearly unlimited complex bottom-up design, which a...
Semiconducting nanowires offer the possibility of nearly unlimited complex bottom-up design, which a...
Semiconducting nanowires offer the possibility of nearly unlimited complex bottom-up design, which a...
Semiconducting nanowires offer the possibility of nearly unlimited complex bottom-up design, which a...
Semiconductors made of earth-abundant elements, such as zinc phosphide, have the potential to substi...
Growth approaches that limit the interface area between layers to nanoscale regions are emerging as ...
Growth approaches that limit the interface area between layers to nanoscale regions are emerging as ...
Growth approaches that limit the interface area between layers to nanoscale regions are emerging as ...
\u3cp\u3eWe show control of the crystal structure of indium phosphide (InP) and gallium phosphide (G...
We show control of the crystal structure of indium phosphide (InP) and gallium phosphide (GaP) nanow...
We show control of the crystal structure of indium phosphide (InP) and gallium phosphide (GaP) nanow...
We show control of the crystal structure of indium phosphide (InP) and gallium phosphide (GaP) nanow...