Destructive over-voltage breakdown of cellular phone power transistors is prevented by using a new voltage-limiting concept. The output voltage is detected by an avalanche-based detector, and limited by decreasing the output power when needed. The voltage detector contains a low voltage bipolar NPN transistor with a well-defined lower breakdown voltage than the high voltage power transistor. Avalanche current in this detector is used to adapt the output power. In this manner the maximum collector voltage is limited to the breakdown voltage of the detector. Measurements show actuation current of the detector for extreme mismatch conditions. The maximum collector voltage is reduced from 15.1 V to 11.5 V once the protection loop is closed. Thi...
This article presented multi-level swell voltage control for minimizing the damage to an on-grid sys...
This paper describes the design of a thyristor surge protective device (TSPD) for telecommunication ...
Currently, wide bandgap (WBG) power semiconductor devices such as low-resistance SiC MOSFETs and GaN...
Destructive over-voltage breakdown of cellular phone power transistors is prevented by using a new v...
Cellular phone power amplifier transistors, implemented in low-cost silicon technology, suffer from ...
Cellular phone power amplifier transistors have to withstand extreme voltages, temperatures and curr...
Abstract Cellular phone power amplifiers (PAs) operate in strongly varying environments and have to ...
A circuit able to protect electronic devices by overvoltages is proposed. A comparison among existi...
The trend of making more profits for the owners, deregulation of the utility market and need for obt...
We have found that selected Motorola transistors of the MM-486, MM-487, and MM-488 type are quite us...
An arrangement is presented which ensures protection against transient and line frequency overvoltag...
This paper presents a design and performance evaluation of three different overvoltage suppression c...
This paper presents novel circuitry for protection of the power transistor in LDOs with adjustable o...
A device is described for indicating and preventing damage to voltage cells such as galvanic cells a...
This article presented multi-level swell voltage control for minimizing the damage to an on-grid sys...
This paper describes the design of a thyristor surge protective device (TSPD) for telecommunication ...
Currently, wide bandgap (WBG) power semiconductor devices such as low-resistance SiC MOSFETs and GaN...
Destructive over-voltage breakdown of cellular phone power transistors is prevented by using a new v...
Cellular phone power amplifier transistors, implemented in low-cost silicon technology, suffer from ...
Cellular phone power amplifier transistors have to withstand extreme voltages, temperatures and curr...
Abstract Cellular phone power amplifiers (PAs) operate in strongly varying environments and have to ...
A circuit able to protect electronic devices by overvoltages is proposed. A comparison among existi...
The trend of making more profits for the owners, deregulation of the utility market and need for obt...
We have found that selected Motorola transistors of the MM-486, MM-487, and MM-488 type are quite us...
An arrangement is presented which ensures protection against transient and line frequency overvoltag...
This paper presents a design and performance evaluation of three different overvoltage suppression c...
This paper presents novel circuitry for protection of the power transistor in LDOs with adjustable o...
A device is described for indicating and preventing damage to voltage cells such as galvanic cells a...
This article presented multi-level swell voltage control for minimizing the damage to an on-grid sys...
This paper describes the design of a thyristor surge protective device (TSPD) for telecommunication ...
Currently, wide bandgap (WBG) power semiconductor devices such as low-resistance SiC MOSFETs and GaN...