This paper describes the design of a thyristor surge protective device (TSPD) for telecommunication equipments based on electrical simulations carried out with ATLAS from SILVACO. The influence of the device doping and geometry on the breakover voltage, switching and holding current and on the on-state voltage drop has been analyzed. It has been shown that the TSPD voltage capability is dependent on the breakdown voltage of the p-n (substrate) junction. Also, it has been observed that p-region doping concentration and emitter geometry have both a great impact on the on-state device operation. A TSPD with breakover voltage of 297 V, holding current of 38.5 mA and on-state voltage drop of 6.7 V at a current of 1A has been demonstrated. © 2006...
An on-going question in the field of surge protection study is how to predict incipient failure of p...
To improve key properties such as ultra-low capacitance (ULC) and high-voltage (HV) breakdown, we ha...
A high voltage thyristor converter is realized by many valve sections, whose volume is approximately...
Due to the increased use of sensitive electronics, specifically microelectronics, even modest lightn...
The Phd thesis presents a simulation study on power device structures based on a dualization of the ...
This article proposes a thyristor conduction-insulated gate bipolar transistor (TC-IGBT) with a p-n-...
The Phd thesis presents a simulation study on power device structures based on a dualization of the ...
This thesis is concerned with a mathematical evaluation of a proposed new Gate Turn Off Thyristor. T...
This paper provides an easy-to-understand guidance for the selection and installation of transient p...
Thyristors are usually three-terminal devices that have four layers of alternating p-type and n-type...
Advanced High Voltage Power Device Concepts describes devices utilized in power transmission and dis...
1a.Usage of LTTs in high voltage switching applications like HVDC and SVC simplifies/avoids the cont...
Transient surges events are problematic in electrical distribution system because they adversely af...
The target of this thesis is to provide an insight of the internal sequences of semiconductor device...
Resumo: Este trabalho tem como objetivo o projeto de um dispositivo supressor de surto de tensão par...
An on-going question in the field of surge protection study is how to predict incipient failure of p...
To improve key properties such as ultra-low capacitance (ULC) and high-voltage (HV) breakdown, we ha...
A high voltage thyristor converter is realized by many valve sections, whose volume is approximately...
Due to the increased use of sensitive electronics, specifically microelectronics, even modest lightn...
The Phd thesis presents a simulation study on power device structures based on a dualization of the ...
This article proposes a thyristor conduction-insulated gate bipolar transistor (TC-IGBT) with a p-n-...
The Phd thesis presents a simulation study on power device structures based on a dualization of the ...
This thesis is concerned with a mathematical evaluation of a proposed new Gate Turn Off Thyristor. T...
This paper provides an easy-to-understand guidance for the selection and installation of transient p...
Thyristors are usually three-terminal devices that have four layers of alternating p-type and n-type...
Advanced High Voltage Power Device Concepts describes devices utilized in power transmission and dis...
1a.Usage of LTTs in high voltage switching applications like HVDC and SVC simplifies/avoids the cont...
Transient surges events are problematic in electrical distribution system because they adversely af...
The target of this thesis is to provide an insight of the internal sequences of semiconductor device...
Resumo: Este trabalho tem como objetivo o projeto de um dispositivo supressor de surto de tensão par...
An on-going question in the field of surge protection study is how to predict incipient failure of p...
To improve key properties such as ultra-low capacitance (ULC) and high-voltage (HV) breakdown, we ha...
A high voltage thyristor converter is realized by many valve sections, whose volume is approximately...