Optically detected microwave resonance spectra of MBE-grown InAs/GaAs quantum dots (QD) was obsd. The signal is detected via modulation of the total intensity of the QD emission induced by W-band (95 GHz) microwave excitation. ODMR lines are obsd. at higher fields when the static field is either parallel or perpendicular to the growth direction, with hole g-values |gh,.dblvert.| = 3.9 and |gh,.perp.| = 3.0, resp. These broad ODMR lines are tentatively attributed to hole spin transitions. A strongly anisotropic low-field transition is ascribed to cyclotron resonance (CR), corresponding to an effective mass of 0.059 m0
A thin InAs/GaAs wetting layer with shallowly formed InAs quantum dots (QDs) is investigated by mean...
The properties of small-sized high density InAs/GaAs quantum dots (emitting at 1.25 eV) are studied ...
The properties of small-sized high density InAs/GaAs quantum dots (emitting at 1.25 eV) are studied ...
Optically detected microwave resonance spectra of MBE-grown InAs/GaAs quantum dots (QD) was obsd. Th...
Optically detected microwave resonance spectra of MBE-grown InAs/GaAs quantum dots (QD) was obsd. Th...
Optically detected microwave resonance spectra of MBE-grown InAs/GaAs quantum dots (QD) was obsd. Th...
A thin InAs/GaAs wetting layer with shallowly formed InAs quantum dots (QDs) is investigated by mean...
A thin InAs/GaAs wetting layer with shallowly formed InAs quantum dots (QDs) is investigated by mean...
Electron paramagnetic resonance (EPR) and optically detected microwave resonance (ODMR) have already...
Electron paramagnetic resonance (EPR) and optically detected microwave resonance (ODMR) have already...
Electron paramagnetic resonance (EPR) and optically detected microwave resonance (ODMR) have already...
Electron paramagnetic resonance (EPR) and optically detected microwave resonance (ODMR) have already...
A thin InAs/GaAs wetting layer with shallowly formed InAs quantum dots (QDs) is investigated by mean...
A thin InAs/GaAs wetting layer with shallowly formed InAs quantum dots (QDs) is investigated by mean...
A thin InAs/GaAs wetting layer with shallowly formed InAs quantum dots (QDs) is investigated by mean...
A thin InAs/GaAs wetting layer with shallowly formed InAs quantum dots (QDs) is investigated by mean...
The properties of small-sized high density InAs/GaAs quantum dots (emitting at 1.25 eV) are studied ...
The properties of small-sized high density InAs/GaAs quantum dots (emitting at 1.25 eV) are studied ...
Optically detected microwave resonance spectra of MBE-grown InAs/GaAs quantum dots (QD) was obsd. Th...
Optically detected microwave resonance spectra of MBE-grown InAs/GaAs quantum dots (QD) was obsd. Th...
Optically detected microwave resonance spectra of MBE-grown InAs/GaAs quantum dots (QD) was obsd. Th...
A thin InAs/GaAs wetting layer with shallowly formed InAs quantum dots (QDs) is investigated by mean...
A thin InAs/GaAs wetting layer with shallowly formed InAs quantum dots (QDs) is investigated by mean...
Electron paramagnetic resonance (EPR) and optically detected microwave resonance (ODMR) have already...
Electron paramagnetic resonance (EPR) and optically detected microwave resonance (ODMR) have already...
Electron paramagnetic resonance (EPR) and optically detected microwave resonance (ODMR) have already...
Electron paramagnetic resonance (EPR) and optically detected microwave resonance (ODMR) have already...
A thin InAs/GaAs wetting layer with shallowly formed InAs quantum dots (QDs) is investigated by mean...
A thin InAs/GaAs wetting layer with shallowly formed InAs quantum dots (QDs) is investigated by mean...
A thin InAs/GaAs wetting layer with shallowly formed InAs quantum dots (QDs) is investigated by mean...
A thin InAs/GaAs wetting layer with shallowly formed InAs quantum dots (QDs) is investigated by mean...
The properties of small-sized high density InAs/GaAs quantum dots (emitting at 1.25 eV) are studied ...
The properties of small-sized high density InAs/GaAs quantum dots (emitting at 1.25 eV) are studied ...