Magnetic properties of InAs/GaAs quantum dots studied by optically detected magnetic resonance at 95 GHz

Electron paramagnetic resonance (EPR) and optically detected microwave resonance (ODMR) have already demonstrated to be useful for the study of radiative and non-radiative recombination centers in semiconductors and of the excitonic states in low dimensional systems like q~antum wells [1,2]. Extending this technique to higher IDlcrowave frequencies (W-band: 95 GHz) yields a number of advantages over conventional frequencies (X-band: 9.5 GHz). Measurements become possible on smaller samples (because of the higher absolute sensitivity) and on excited states with shorter lifetimes (because of the high micrawave frequencies). We report on ODMR measurements performed on MBE-grown InAs/GaAs quantum dot (QD) structures