On combining surface and bulk passivation of SiN_x:H layers for mc-Si solar cells

A route, as followed by ECN, is described for development of SiNx:H layers deposited by microwave (MW) PECVD, which are suited for surface and bulk passivation of mc-Si solar cells. First research was focussed on surface passivation and this resulted in the development of SiN layers that were Si-rich and where the hydrogen is mainly bonded to silicon atoms. A disadvantage of such Si-rich layers is their large absorption at shorter wavelengths, which make them unsuitable as front side AR coatings. Further, these layers appeared to be less suitable for bulk passivation. The next step therefore was the development of SiN layers for bulk passivation. For good bulk passivation of solar cells by means of a thermal anneal of the SiN layers, we found that SiN layers with high N-H bonding concentrations are required. Fine-tuning of the deposition conditions of these layers, finally resulted in the development of a SiN layer type which combines the three desired properties: low absorption (good anti-reflection coating), good surface passivation (Seff on FZ wafers less than 50 cm/s) and good bulk passivation.