Improved thermally stable surface and bulk passivation of PECVD SiN <sub>X</sub>:H using N<sub>2</sub> and SiH<sub>4</sub>
- Weeber, A.W.
- Rieffe, H. C.
- Goris, M. J.A.A.
- Hong, J.
- Kessels, W. M.M.
- van de Sanden, M. C.M.
- Soppe, W. J.
DOIAbstract
Excellent and thermally stable surface passivation of SiNx:H grown using N2 and SiH4 as precursor gases has been obtained with MicroWave PECVD. The thermal stability of the surface passivation is even better than that for layers deposited with NH3 and SiH 4. Additionally, we found that the bulk passivating properties of SiNx:H deposited with N2+SiH4 are as good as that of the standard SiNx:H deposited with NH3+SiH 4. Absorption at shorter wavelengths in SiNx:H layers deposited with N2+SiH4 is somewhat higher. Solar cell efficiencies are comparable for both nitrides.</p
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