Add to ORKGAnalytical methods for the description of ion implantation show good agreement with experiment and Monte-Carlo simulations in most cases. Problems arise with special geometrics such as trenches. To be able to simulate implantation and diffusion in such cases, a Monte-Carlo interface has been added to the process simulation program COMPOSITE. (AIS-B
ABC Si-subs. Keywords Ion implantationn, Silicon, Modeling, Simulation, Monte Carlo model Abstract-...
The high accuracy which is necessary for modern process simulation often requires the use of Monte-C...
In this paper, a new analytical model for the description of lateral spread of implanted ions is com...
A new method for an accurate and CPU time efficient three-dimensional simulation of ion implantation...
Two methods are described for improving the results of a Monte Carlo technique used to simulate the ...
Two methods are described for improving the results of a Monte Carlo technique used to simulate the ...
Analytical calculations of two-dimensional implantation profiles taking into account the different s...
For the analytical description of doping profiles after Ion Implantation, good multilayer models are...
Ion implantation is the most important doping technique for VLSI circuits. In this contribution, mod...
textA physically-based 3-dimensional Monte-Carlo simulator has been developed within UT-MARLOWE, whi...
textA physically-based 3-dimensional Monte-Carlo simulator has been developed within UT-MARLOWE, whi...
A novel splitting algorithm called MC-AIPA is proposed for MC (Monte Carlo) ion implantation simulat...
Three trajectory split methods [I] for the acceleration of two and three-dimen-sional Monte Carlo si...
Moonte Carlo simulations are perfectly suit.ed to check the validity of simiple models. We investi-g...
In this paper, a new method for an accurate and time efficient 3D simulation of ion implantation and...
ABC Si-subs. Keywords Ion implantationn, Silicon, Modeling, Simulation, Monte Carlo model Abstract-...
The high accuracy which is necessary for modern process simulation often requires the use of Monte-C...
In this paper, a new analytical model for the description of lateral spread of implanted ions is com...
A new method for an accurate and CPU time efficient three-dimensional simulation of ion implantation...
Two methods are described for improving the results of a Monte Carlo technique used to simulate the ...
Two methods are described for improving the results of a Monte Carlo technique used to simulate the ...
Analytical calculations of two-dimensional implantation profiles taking into account the different s...
For the analytical description of doping profiles after Ion Implantation, good multilayer models are...
Ion implantation is the most important doping technique for VLSI circuits. In this contribution, mod...
textA physically-based 3-dimensional Monte-Carlo simulator has been developed within UT-MARLOWE, whi...
textA physically-based 3-dimensional Monte-Carlo simulator has been developed within UT-MARLOWE, whi...
A novel splitting algorithm called MC-AIPA is proposed for MC (Monte Carlo) ion implantation simulat...
Three trajectory split methods [I] for the acceleration of two and three-dimen-sional Monte Carlo si...
Moonte Carlo simulations are perfectly suit.ed to check the validity of simiple models. We investi-g...
In this paper, a new method for an accurate and time efficient 3D simulation of ion implantation and...
ABC Si-subs. Keywords Ion implantationn, Silicon, Modeling, Simulation, Monte Carlo model Abstract-...
The high accuracy which is necessary for modern process simulation often requires the use of Monte-C...
In this paper, a new analytical model for the description of lateral spread of implanted ions is com...