A novel splitting algorithm called MC-AIPA is proposed for MC (Monte Carlo) ion implantation simulation into amorphous Silicon material. The injection ion is split two virtual ions during each nuclear scattering with target atom. The virtual ions have different energy and weight which is different from other splitting scheme. The high energy virtual ion still runs but the rest position of the low energy virtual ion can be acquired by a pre-calculated database called LERPD (Low Energy Rest Position Database). About 3 orders statistic enhancement can be acquired compared with that of no splitting algorithm in almost the same CPU time.EI
In this paper, a new method for an accurate and time efficient 3D simulation of ion implantation and...
The high accuracy which is necessary for modern process simulation often requires the use of Monte-C...
Efficient simulations of ion implantation are very important to ultra shallow junction technology. I...
Two methods are described for improving the results of a Monte Carlo technique used to simulate the ...
Abstract—Monte Carlo simulation is widely used for predicting ion implantation profiles in amorphous...
A new method for the acceleration of MD (molecular dynamics) simulation of ion implantation into cry...
The amorphization of silicon due to atomic displacement during ion implantation has been simulated. ...
textA physically-based model for ion implantation of any species into single crystal silicon and a ...
Three trajectory split methods [I] for the acceleration of two and three-dimen-sional Monte Carlo si...
<正> A computer program MACA was developed for simulating high-dose ion implantation into amorp...
A new method for an accurate and CPU time efficient three-dimensional simulation of ion implantation...
We have developed a reliable and efficient molecular dynamics program LEACS to simulate the low ener...
Analytical methods for the description of ion implantation show good agreement with experiment and M...
A new method for the acceleration of MD (molecular dynamics) simulation of ion implantation into cry...
textA physically-based 3-dimensional Monte-Carlo simulator has been developed within UT-MARLOWE, whi...
In this paper, a new method for an accurate and time efficient 3D simulation of ion implantation and...
The high accuracy which is necessary for modern process simulation often requires the use of Monte-C...
Efficient simulations of ion implantation are very important to ultra shallow junction technology. I...
Two methods are described for improving the results of a Monte Carlo technique used to simulate the ...
Abstract—Monte Carlo simulation is widely used for predicting ion implantation profiles in amorphous...
A new method for the acceleration of MD (molecular dynamics) simulation of ion implantation into cry...
The amorphization of silicon due to atomic displacement during ion implantation has been simulated. ...
textA physically-based model for ion implantation of any species into single crystal silicon and a ...
Three trajectory split methods [I] for the acceleration of two and three-dimen-sional Monte Carlo si...
<正> A computer program MACA was developed for simulating high-dose ion implantation into amorp...
A new method for an accurate and CPU time efficient three-dimensional simulation of ion implantation...
We have developed a reliable and efficient molecular dynamics program LEACS to simulate the low ener...
Analytical methods for the description of ion implantation show good agreement with experiment and M...
A new method for the acceleration of MD (molecular dynamics) simulation of ion implantation into cry...
textA physically-based 3-dimensional Monte-Carlo simulator has been developed within UT-MARLOWE, whi...
In this paper, a new method for an accurate and time efficient 3D simulation of ion implantation and...
The high accuracy which is necessary for modern process simulation often requires the use of Monte-C...
Efficient simulations of ion implantation are very important to ultra shallow junction technology. I...