The more advanced an integrated circuit becomes, the more stringent are the demands for certain properties of a dielectric or insulating material. In addition, it is essential that the layer maintain its specific electrical, physical and chemical properties after incorporation in the device structure and during subsequent processing. Due to temperature budget constraints and the accelerated decrease of feature sizes below 0.25 mu m one can no longer rely on traditional choices but has to search for alternatives, both for low and high permittivity replacements. In the article we survey currently used low dielectric constant materials and future trends for micro-electronic applications
One of the most important electrical requirements in high performance electronic systems or high spe...
The topic of thin films is an area of increasing importance in materials science, electrical enginee...
A small |Delta;ϵ| LC mixture exhibits an ultra-low viscosity, low activation energy, and high transm...
The more advanced an integrated circuit becomes, the more stringent are the demands for certain prop...
Since the application of silicon materials in electronic devices in the 1950s, microprocessors are c...
At 0.18 microns and below minimum device dimensions in Ultra Large Scale Integrated Circuits, signal...
The purpose of this laboratory-directed research and development (LDRD) project was to develop and a...
AbstractIn this paper, as integrated circuit (IC) dimensions continue to decrease, RC delay, crossta...
Advanced interconnect technologies require the continuous development of reliable low-k dielectric m...
A new class of high dielectric constant materials is presented based on binary and ternary amorphous...
Résumé du livre : This book describes various dielectric material properties, used in many kinds of ...
The search for new dielectric materials has grown exponentially as more emphasis has been placed on ...
New classes of high dielectric constant materials based on binary and ternary amorphous metal oxides...
High-dielectric constant (high-k) gate oxides and low-dielectric constant (low-k) interlayer dielect...
Advances in telecommunications require electronics that operate at ever-increasing frequencies, exem...
One of the most important electrical requirements in high performance electronic systems or high spe...
The topic of thin films is an area of increasing importance in materials science, electrical enginee...
A small |Delta;ϵ| LC mixture exhibits an ultra-low viscosity, low activation energy, and high transm...
The more advanced an integrated circuit becomes, the more stringent are the demands for certain prop...
Since the application of silicon materials in electronic devices in the 1950s, microprocessors are c...
At 0.18 microns and below minimum device dimensions in Ultra Large Scale Integrated Circuits, signal...
The purpose of this laboratory-directed research and development (LDRD) project was to develop and a...
AbstractIn this paper, as integrated circuit (IC) dimensions continue to decrease, RC delay, crossta...
Advanced interconnect technologies require the continuous development of reliable low-k dielectric m...
A new class of high dielectric constant materials is presented based on binary and ternary amorphous...
Résumé du livre : This book describes various dielectric material properties, used in many kinds of ...
The search for new dielectric materials has grown exponentially as more emphasis has been placed on ...
New classes of high dielectric constant materials based on binary and ternary amorphous metal oxides...
High-dielectric constant (high-k) gate oxides and low-dielectric constant (low-k) interlayer dielect...
Advances in telecommunications require electronics that operate at ever-increasing frequencies, exem...
One of the most important electrical requirements in high performance electronic systems or high spe...
The topic of thin films is an area of increasing importance in materials science, electrical enginee...
A small |Delta;ϵ| LC mixture exhibits an ultra-low viscosity, low activation energy, and high transm...