Add to ORKGNew classes of high dielectric constant materials based on binary and ternary amorphous metal oxides will be discussed. These films are compatible with low temperature processing within the metal layers of a circuit and can therefore be used with conventional metal electrodes like TiN. Different classes of mixed metal oxides will be discussed that are based on alloys of tantalum oxide and titanium oxide
The more advanced an integrated circuit becomes, the more stringent are the demands for certain prop...
135 pagesABSTRACT Dielectrics have been extensively investigated in IC technology for capacitor and ...
An impedance study of amorphous thin oxide films grown on sputtered Al-Nb alloys is presented. The c...
A new class of high dielectric constant materials is presented based on binary and ternary amorphous...
Amorphous metal oxide has been a popular choice for thin film material in recent years due to its hi...
Significant effort is presently focused on reducing the size and weight of power electronic modules....
The high permittivity perovskite oxides have been intensively investigated for their possible applic...
Atomic Vapor Deposition (AVD) technique was successfully applied for the depositions of amorphous Hf...
The continuing drive towards miniaturization of electronic devices is motivating the search for new ...
This paper reviews several high-k ALD processes potentially applicable to the production of capacito...
The requirements and development of high-k dielectric films for application in storage cells of futu...
Approved for public release; distribution unlimited. See additional restrictions described on inside...
The requirements and development of high-k dielectric films for application in storage cells of futu...
d acting on its behalf, a paid-up, non exclusive, irrevomble worldwide license in works, dmnbute mpm...
<p>Motivation of Study: Thin films capacitor has bring much interesting factor in modern storage tec...
The more advanced an integrated circuit becomes, the more stringent are the demands for certain prop...
135 pagesABSTRACT Dielectrics have been extensively investigated in IC technology for capacitor and ...
An impedance study of amorphous thin oxide films grown on sputtered Al-Nb alloys is presented. The c...
A new class of high dielectric constant materials is presented based on binary and ternary amorphous...
Amorphous metal oxide has been a popular choice for thin film material in recent years due to its hi...
Significant effort is presently focused on reducing the size and weight of power electronic modules....
The high permittivity perovskite oxides have been intensively investigated for their possible applic...
Atomic Vapor Deposition (AVD) technique was successfully applied for the depositions of amorphous Hf...
The continuing drive towards miniaturization of electronic devices is motivating the search for new ...
This paper reviews several high-k ALD processes potentially applicable to the production of capacito...
The requirements and development of high-k dielectric films for application in storage cells of futu...
Approved for public release; distribution unlimited. See additional restrictions described on inside...
The requirements and development of high-k dielectric films for application in storage cells of futu...
d acting on its behalf, a paid-up, non exclusive, irrevomble worldwide license in works, dmnbute mpm...
<p>Motivation of Study: Thin films capacitor has bring much interesting factor in modern storage tec...
The more advanced an integrated circuit becomes, the more stringent are the demands for certain prop...
135 pagesABSTRACT Dielectrics have been extensively investigated in IC technology for capacitor and ...
An impedance study of amorphous thin oxide films grown on sputtered Al-Nb alloys is presented. The c...