Add to ORKGA new class of high dielectric constant materials is presented based on binary and ternary amorphous metal oxides. These films are compatible with low temperature processing and can be used with conventional metal electrodes like TiN. Metal alloys of both Tantalum oxide and titanium oxide will be discussed with dielectric constants as high as 62 and leakage currents of less than 10-8 A/cm2 at IMV/cm
The exponential growth of the silicon industry can be attributed to that fact that silicon has a nat...
Whilst progress on solution-processed oxide semiconductors has been rapidly advancing, research effo...
The high permittivity perovskite oxides have been intensively investigated for their possible applic...
A new class of high dielectric constant materials is presented based on binary and ternary amorphous...
New classes of high dielectric constant materials based on binary and ternary amorphous metal oxides...
The requirements and development of high-k dielectric films for application in storage cells of futu...
The requirements and development of high-k dielectric films for application in storage cells of futu...
Amorphous metal oxide has been a popular choice for thin film material in recent years due to its hi...
Solution-based oxide gate dielectric layers are prepared from metal nitrates using UV-assisted annea...
Atomic Vapor Deposition (AVD) technique was successfully applied for the depositions of amorphous Hf...
In this contribution we present results on the structural and electrical properties of amorphous RES...
Thin films of high-k oxides are presently used in semiconductor industry as gate dielectrics. In thi...
Whilst progress on solution-processed oxide semiconductors has been rapidly advancing, research effo...
The ever increasing demand for improved performance of silicon based microelectronics, at a lower co...
The demands for faster, smaller, and less expensive electronic equipments are basically the driving ...
The exponential growth of the silicon industry can be attributed to that fact that silicon has a nat...
Whilst progress on solution-processed oxide semiconductors has been rapidly advancing, research effo...
The high permittivity perovskite oxides have been intensively investigated for their possible applic...
A new class of high dielectric constant materials is presented based on binary and ternary amorphous...
New classes of high dielectric constant materials based on binary and ternary amorphous metal oxides...
The requirements and development of high-k dielectric films for application in storage cells of futu...
The requirements and development of high-k dielectric films for application in storage cells of futu...
Amorphous metal oxide has been a popular choice for thin film material in recent years due to its hi...
Solution-based oxide gate dielectric layers are prepared from metal nitrates using UV-assisted annea...
Atomic Vapor Deposition (AVD) technique was successfully applied for the depositions of amorphous Hf...
In this contribution we present results on the structural and electrical properties of amorphous RES...
Thin films of high-k oxides are presently used in semiconductor industry as gate dielectrics. In thi...
Whilst progress on solution-processed oxide semiconductors has been rapidly advancing, research effo...
The ever increasing demand for improved performance of silicon based microelectronics, at a lower co...
The demands for faster, smaller, and less expensive electronic equipments are basically the driving ...
The exponential growth of the silicon industry can be attributed to that fact that silicon has a nat...
Whilst progress on solution-processed oxide semiconductors has been rapidly advancing, research effo...
The high permittivity perovskite oxides have been intensively investigated for their possible applic...